High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

Tong, Jianhua; Tobing, Landobasa Y. M.; Ni, Pengpeng; Zhang, Dao Hua

doi:10.1016/j.apsusc.2017.08.177

Cited by 21 publications

(20 citation statements)

References 20 publications

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“…To improve device performance for infrared detection, imaging, and target tracking, tremendous effort has been focused on creating distinctive materials and developing epitaxy technology . In contrast to HgCdTe, strained‐layer superlattices (SLs) of III–V materials have the advantages of high uniformity, low tunneling currents, and low Auger recombination rates . Importantly, the unique band alignment of these SLs allows flexible bandgap engineering (i.e., adjusting the bandgap and extending the emission wavelength) .…”

Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

“…In contrast to HgCdTe, strained‐layer superlattices (SLs) of III–V materials have the advantages of high uniformity, low tunneling currents, and low Auger recombination rates . Importantly, the unique band alignment of these SLs allows flexible bandgap engineering (i.e., adjusting the bandgap and extending the emission wavelength) . High‐performance photodetectors and lasers based on SLs of III–V materials (such as InAs/GaSb) have been extensively demonstrated.…”

Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

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Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fang

Gong

et al. 2019

Physica Rapid Research Ltrs

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Infrared optoelectronic devices based on type‐II superlattice structures of III–V semiconductor materials have progressed significantly during the past decades. Exploring and further expanding the material space is of great significance for the development of infrared applications. Herein, a superlattice structure based on InAs(Sb)/InxGa1−xAsySb1−y grown using a fractional monolayer alloy process to control the superlattice composition and structure is presented. High‐order satellite peaks with a narrow full width at half maximum (31 arcs) in the X‐ray diffraction patterns indicate the good crystal quality of the superlattices. Transmission electron microscopy (TEM) with energy‐dispersive spectroscopy (EDS) analysis validate the fractional monolayer alloy growth method. Photoluminescence measurements and k·p model calculations reveal the superior optical properties of the superlattice (sevenfold higher intensity than that of InAs/GaSb). In addition, the flexible control over the superlattice structure afforded by the method allows miniband engineering to cover the mid‐wavelength and long‐wavelength infrared regions. This work highlights the great potential of InAs(Sb)/InxGa1−xAsySb1−y superlattices in infrared optoelectronic devices.

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Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fang

Gong

et al. 2019

Physica Rapid Research Ltrs

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“…Thanks to the state-of-the-art fabrication techniques such as electron-beam lithography (EBL) and focused ion-beam (FIB) milling, as well as commercially available numerical design tools like finite-difference time-domain (FDTD), the design and fabrication of metallic nanostructures for infrared range now become very effective. Metallic nanostructures with different configurations and metals can be used to integrate with traditional detection structures such as heterojunction structure [12][13][14][15][16][17] , Schottky diode 18 , quantum structures 19 , and thermal detector 20 . Combined with these structures, the photoresponse of those detectors can be significantly improved.…”

Section: Introductionmentioning

confidence: 99%

Surface plasmon enhanced infrared photodetection

Tong

Suo

et al. 2019

Opto-Electronic Advances

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Infrared photodetectors have been used extensively in biomedicine, surveillance, communication and astronomy. However, state of the art technology based on III-V and II-VI compounds still lacks excellent performance for high-temperature operation. Surface plasmon polaritons (SPPs) have demonstrated their capability in improving the light detection from visible to infrared wave range due to their light confinement in subwavelength scale. Advanced fabrication techniques such as electron-beam lithography (EBL) and focused ion-beam (FIB), and commercially available numerical design tool like Finite-Difference Time-Domain (FDTD) have enabled rapid development of surface plasmon (SP) enhanced photodetectors. In this review article, the basic mechanisms behind the SP-enhanced photodetection, the different type of plasmonic nanostructures utilized for enhancement, and the reported SP-enhanced infrared photodetectors will be discussed.

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“…InAsSb/GaSb heterostructures [5] and InAsSb photovoltaic diodes [6][7]. To obtain good performance at high operational temperature, it is essential to suppress thermal currents.…”

Section: Introductionmentioning

confidence: 99%

InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

Tong

Tobing

et al. 2018

J Mater Sci

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High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

Cited by 21 publications

References 20 publications

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Surface plasmon enhanced infrared photodetection

InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

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High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

Cited by 21 publications

References 20 publications

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Surface plasmon enhanced infrared photodetection

InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

Contact Info

Product

Resources

About

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice