High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition

Sun, Yanhong; Dong, Junping; Sheng, Yu; Zhao, Yongming

doi:10.1007/s10854-016-5585-z

Cited by 6 publications

(2 citation statements)

References 18 publications

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“…Even though the GaP buffer layer has also been utilized, it was known to be less effective in terms of TDD, residual stress, and quality of InP, compared with the GaAs buffer layer [172][173][174]. Besides, the employment of compositionally graded buffer layer, including InGaAs, InGaP, InAlAs, and InGaAlAs alloys, has shown successful reduction of the TDD in InP/GaAs [175][176][177][178]. For example, Quitoriano et al [175], who studied graded buffers grown on GaAs substrates to obtain high-quality InP without phase separation, demonstrated low TDD of 1.2 × 10 6 cm -2 through the hybrid InGaAs and InGaP graded buffer layer.…”

Section: Intermediate Buffer Layermentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

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Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

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Section: Intermediate Buffer Layermentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

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“…Several techniques, including two-step growth [5][6][7], strained-layer superlattice [8], post-annealing [9,10], epitaxial lateral overgrowth (ELO) [11], and AlGaInAs graded buffers [12,13], have been investigated to reduce the defect density of an InP/GaAs virtual substrate. The two-step method, which was developed early to grow GaAs on Si, was simple and useful.…”

Section: Introductionmentioning

confidence: 99%

Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition

Tsai

2022

Coatings

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Integrating indium phosphide (InP) material on a gallium arsenide (GaAs) substrate to form an InP/GaAs virtual substrate has been an attractive research subject over the past decade. However, the epitaxial growth of InP on GaAs is challenging due to a large mismatch in the lattice constant and thermal expansion coefficient. This paper describes the successful hetero-epitaxy of InP on a GaAs substrate by metalorganic chemical vapor deposition. The hetero-epitaxy in this study utilized a hybrid growth method involving a thin indium gallium arsenide (InGaAs) linearly graded buffer, two-step InP growth, and a post-annealing process. Transmission electron microscopic observations showed that a traditional two-step InP/GaAs virtual substrate was smooth but had a high threading dislocation density (TDD) of 1.5 × 109 cm−2 near the InP surface. The high TDD value can be reduced to 2.3 × 108 cm−2 by growing the two-step InP on a thin InGaAs linearly graded buffer. The TDD of an InP/GaAs virtual substrate can be further improved to the value of 1.5 × 107 cm−2 by removing the low-temperature InP nucleation layer and carrying out a post-annealing process. A possible reason for the improvement in TDD may relate to a dislocation interaction such as the annihilation of mobile threading dislocations. Room-temperature photoluminescence spectra of InP/GaAs virtual substrates with different TDD values were compared in this study. The optical and micro-structural characterization results suggest that the proposed growth method may be feasible for making good-quality and relatively low-cost InP/GaAs virtual substrates for the integration of optoelectronic devices on them.

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Epitaxial Lateral Overgrowth of InP on Nanopatterned GaAs Substrates by Metal–Organic Chemical Vapor Deposition

Fan

Wang

et al. 2018

Journal of Elec Materi

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High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition

Cited by 6 publications

References 18 publications

Heteroepitaxial Growth of III-V Semiconductors on Silicon

Heteroepitaxial Growth of III-V Semiconductors on Silicon

Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition

Epitaxial Lateral Overgrowth of InP on Nanopatterned GaAs Substrates by Metal–Organic Chemical Vapor Deposition

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