High-quality InSb growth by metalorganic vapor phase epitaxy

Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE

“…Figure 3 shows the AFM images of the surfaces of samples A, B, C and D in an area of 1 × 1 µm 2 , respectively. Atomic stepand-terrace structure with similar results reported by Akira et al [15] is clearly visible on the surfaces of samples A, B and C, indicating the 2D mode in the growth process of the InSb layer. However, the surface of sample D at a higher growth temperature presents granular stripes.…”

“…It is deduced that sample C1 has a background of acceptors like V Sb or InSb defects that start to dominate resulting in this InSb sample behaving like a p-type conduction. Compared with InSb thin films grown on LT InSb [15,16,29,31] or InAlSb [17,18,22] buffers, the room-temperature electrical mobility of our samples grown directly on GaAs substrates has a similar value. Figure 7 shows the mobility of sample C as a function of temperature obtained by Hall measurements.…”

“…[12,13] Generally, buffer layers [14] are now in common use to solve this problem. Some groups took a two-step method consisting of a lowtemperature InSb buffer layer [13,15,16] at the initial growing to filtering the dislocation. The InAlSb layer is also an alternative buffer [12,17,18] to reduce the misfit dislocation associated with lattice mismatch.…”

Metal organic vaper phase epitaxy growth of high-quality AlInSb using tritertiarybutylaluminum and tris(dimethylamino)antimony sources

“…The films were grown on an InSb buffer layer having atomically flat surface, fabricated on a GaAs substrate. 20) To evaluate the improvement in the AlInSb film quality by the modified growth sequence, we compared the proposed method with a conventional growth sequence [Fig. 1(a)].…”