We developed a small InSb mid-infrared (2–7 µm wavelength range) photon detector that operates at room temperature. The photodiode was made from (hetero epitaxial) InSb layers that were grown on a semi-insulating GaAs substrate by molecular beam epitaxy. To suppress the effects of the diffusion current of the p–i–n photodiode, we used an AlInSb barrier layer that raises the resistance of the photodiode. We also optimized the device's doping concentration and the infrared incidence window structure. These optimization steps realized high photoelectric current output in a room-temperature environment. We also increased the signal-to-noise ratio of the detector by connecting multiple photodiodes in series. The size of this detector is 1.9×2.7×0.4 mm3 and the detectivity is 2.8×108 cm Hz1/2/W at 300 K. This is a practical IR detector that can be used in general signal amplification ICs.

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