Piezoelectric LiNbO/sub 3/ and LiTaO/sub 3/ films for SAW device applications

Shibata, Yoshihiko; Kuze, Naohiro; Kaya, Kunimitsu; Matsui, Masahiro; Kanai, Masaki; Kawai, Takazumi

doi:10.1109/ultsym.1996.583968

Cited by 4 publications

(16 citation statements)

References 10 publications

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“…However, this requires very small frequency steps δf in the region of the pyroelectric resonance; in our case δf = 1 Hz. For ∆f = 5 Hz and ν = 0.22, we get k = 0.04 in good agreement with literature data [29]. The experimental data shown in Figure 2a was determined from a Pb(Pb 0.10 Zr 0.21 Ti 0.69 )O 3 thin film with a thickness of 600 nm.…”

Section: Pyroelectric Current Spectrumsupporting

confidence: 88%

Nondestructive testing of ferroelectrics by thermal wave methods

Gerlach

Suchaneck

Movchikova

et al. 2007

Sensor Systems and Networks: Phenomena, Technology, and Applications for NDE and Health Monitoring 2007

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The application of thermal wave measurement techniques was demonstrated for Strontium Barium Niobate (SBN) and Lithium Tantalate (LT) crystals, Lead Zirconate Titanate (PZT) ceramics, and PZT thin films. We have investigated the influence of poling conditions and of chromium and cerium doping on the polarization distribution and domain wall pinning in SBN crystals, the impact of ion beam etching on the polarization distribution in high-detectivity LT infrared sensors, the influence of poling procedure on the polarization distribution of PZT piezoceramics, and the polarization distribution in self-polarized PZT thin films.

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Section: Pyroelectric Current Spectrumsupporting

confidence: 88%

Nondestructive testing of ferroelectrics by thermal wave methods

Gerlach

Suchaneck

Movchikova

et al. 2007

Sensor Systems and Networks: Phenomena, Technology, and Applications for NDE and Health Monitoring 2007

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“…The first reports on the growth of c ‐axis‐oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering on C ‐sapphire substrates appeared in early seventies . Since then these substrates were widely studied for the growth of the Z ‐LN and Z ‐LT films by different methods: LPE, epitaxial growth by melting, RF sputtering pulsed laser deposition (PLD), molecular beam epitaxy (MBE), metal organic, and aqueous precursor solutions, sol–gel, spin coating, microwave oven method, and chemical vapor deposition (CVD) and its derivatives such as thermal plasma CVD, pulsed metal–organic CVD (MOCVD), pulsed‐injection (PI) MOCVD, spray MOCVD, atmospheric pressure aerosol MOCVD, solid source flash evaporation, combinatorial high‐vacuum CVD, atomic layer deposition (ALD), etc. In the following sections, we summarize the problems and the applied strategies for the optimization of growth of high‐quality LN–LT layers.…”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

“…Deposition temperatures of 500–800 °C were used for the growth of epitaxial LN layers by physical deposition methods (e.g., PLD and RF sputtering) . To grow high‐quality LT films, higher deposition temperatures have to be used than those used for LN films due to the very high melting temperature of LT (LT ≈ 1650 °C and LN ≈ 1250 °C) . High‐quality epitaxial LT films have been obtained at temperatures higher than 780 °C by PLD …”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

“…To grow high‐quality LT films, higher deposition temperatures have to be used than those used for LN films due to the very high melting temperature of LT (LT ≈ 1650 °C and LN ≈ 1250 °C) . High‐quality epitaxial LT films have been obtained at temperatures higher than 780 °C by PLD …”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

“…However, the control of LN/LT film composition with a precision of 1%–2% is not sufficient for industrial applications due to a strong variation of their physical properties as a function of Li nonstoichiometry. Many reports make claims of high‐quality LN or LT films obtained by PLD, MOCVD, and sputtering, but very few reports were found giving a precise estimate of Li concentration and dealing with stoichiometry in LN–LT thin films in detail. The application of indirect methods, used for compositional analysis of LN/LT single crystals (discussed above), to thin films is complicated by the fact that the physical properties of the thin films are highly dependent not only on the nonstoichiometry but also on the residual stresses and the defects present (e.g., grain boundaries, dislocations, and structural defects).…”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

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Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Bartasyte

Margueron

Baron

et al. 2017

Adv Materials Inter

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In 1928, Zachariasen discovered the LiNbO 3 phase. [1] The first single crystals were grown using the flux method by Matthias Over the past five decades, LiNbO 3 and LiTaO 3 single crystals and thin films have been studied intensively for their exceptional acoustic, electro-optical, and pyroelectric and ferroelectric properties. Today, LiNbO 3 single crystals in electro-optics are equivalent to silicon in electronics, and about 70% of radio-frequency (RF) filters, based on surface acoustic waves, are fabricated on these single crystals. These materials in the form of thin films are needed urgently for the development of the next-generation of high-frequency and/or wide-band RF filters or tuneable frequency filters adapted to the fifth generation of infrastructures/networks/communications. The integration of LiNbO 3 films in guided nanophotonic devices will allow higher operational frequencies, wider bandwidth, and miniaturized optical devices in line with improved electronic conversion. Here, the challenges and the achievements in the epitaxial growth of LiTaO 3 and LiNbO 3 thin films and their integration with silicon technology and to acoustic and guided nanophotonic devices are discussed in detail. The systematic representation and classification of all epitaxial relationships reported in the literature have been carried out in order to help the prediction of the epitaxial orientations in the new heterostructures. Future prospects of potential applications and the expected performances of thin film devices are overviewed, as well.Figure 2. Schematic representation of the layer transfer process by the ion slicing technique consisting of a) ion implantation, b) wafer bonding, c) laser irradiation or heating in order to obtain d) a single crystalline layer on the host (Si) substrate. Reproduced with permission. [53]Figure 3. a,b) Electron microscopy images and c) schematic diagram of a microresonator based on LiNbO 3 film on Si and fabricated by the layer transfer technique. Reproduced with permission. [53]The first reports on the growth of c-axis-oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering Adv. Mater. Interfaces 2017, 4, 1600998 www.advmatinterfaces.de www.advancedsciencenews.com Figure 6. Frequency response of a) HBAR and b) FBAR based on thinned X-cut LiNbO 3 layer on Si. Schematic representations of a) HBAR and b) FBAR structures are given in the insets. Reproduced with permission. [78]

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High-frequency surface acoustic wave devices based on epitaxial Z-LiNbO3 layers on sapphire

Almirall

Oliveri

Daniau

et al. 2019

Applied Physics Letters

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Filter market demand pushes to the development of new piezoelectric materials to address modern telecommunication challenges. Composite wafers combining an epitaxial piezoelectric layer and a said high velocity and acoustic quality substrate is a promising way to answer that demand. However, the fabrication of high-quality LiNbO3 films with reproducible physical properties is complicated by the difficulty to control volatile Li2O incorporation into the film and to measure its composition. So far, large-scale production of films with physical properties suitable for the targeted applications is not available. In this paper, lithium niobate films with controlled nonstoichiometry were deposited by means of pulsed injection metalorganic vapor phase deposition. We have demonstrated a high acoustical performance for surface acoustic wave (SAW) devices operating in the frequency range from 3.7 GHz up to 5.3 GHz and based on grown epitaxial Z-axis oriented LiNbO3 films on sapphire. An electromechanical coupling of 8 % for the Rayleigh wave at 5.3 GHz was demonstrated experimentally.

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Piezoelectric LiNbO/sub 3/ and LiTaO/sub 3/ films for SAW device applications

Cited by 4 publications

References 10 publications

Nondestructive testing of ferroelectrics by thermal wave methods

Nondestructive testing of ferroelectrics by thermal wave methods

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

High-frequency surface acoustic wave devices based on epitaxial Z-LiNbO3 layers on sapphire

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Piezoelectric LiNbO/sub 3/ and LiTaO/sub 3/ films for SAW device applications

Cited by 4 publications

References 10 publications

Nondestructive testing of ferroelectrics by thermal wave methods

Nondestructive testing of ferroelectrics by thermal wave methods

Toward High‐Quality Epitaxial LiNbO3 and LiTaO3 Thin Films for Acoustic and Optical Applications

High-frequency surface acoustic wave devices based on epitaxial Z-LiNbO3 layers on sapphire

Contact Info

Product

Resources

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Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications