High quality morphology and high Hall mobility of GePb alloys formed by using implantation and annealing process

Yang, Jiayin; Hu, Huiyong; Miao, Yuyang

doi:10.1117/12.2565317

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2024

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“…In addition, GePb photodetector with low Pb composition can extend the cutoff wavelength up to 2.5 µm, which has promising applications for shortwave infrared detection and imaging [6]. GePb alloy also has high hall mobility and is a candidate for high-speed channel material [7]. Several methods have * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Investigation of temperature and H₂ on GePb/Ge multiple quantum well growth

Liu,

Zheng,

Huang

et al. 2024

J. Phys. D: Appl. Phys.

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To reveal the growth behavior of GePb/Ge multiple quantum well (MQW) samples, both the influence of growth temperature and H2/Ar atmosphere are investigated by sputtering epitaxy. As the growth temperature increases from 250 to 400 ºC, Pb atoms become more active and migrate easily to the surface, forming Pb clusters. As a result, the Pb composition in the GePb/Ge MQW is decreased from 3.5% to 1.8%. When H2 is introduced into the chamber, it is found that the MQW disappears and GePb film with uniform Pb distribution is formed. This is possibly because that the introduction of H2 can retain Pb atoms and the GePb is still grown even if the Pb flux is off. The results show that low temperature and H2 atmosphere are effective methods to further break the low solid solubility limit of Pb in Ge.

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Section: Introductionmentioning

confidence: 99%