2007
DOI: 10.1116/1.2718963
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High quality of 830nm material grown by solid source molecular beam epitaxy for laser device printing applications

Abstract: Temperature dependence of photoluminescence oxygen-related deep levels in Al 0.2 Ga 0.3 In 0.5 P : Be grown by solid source molecular beam epitaxy Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy

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Cited by 2 publications
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“…In addition, epitaxial growth¯lms with large surface and interface with atomic°atness can be obtained. [78][79][80] But, there are also some problems in MBE, such as expensive equipment, high maintenance cost, long growth time and di±cult mass production.…”
Section: Mbementioning
confidence: 99%
“…In addition, epitaxial growth¯lms with large surface and interface with atomic°atness can be obtained. [78][79][80] But, there are also some problems in MBE, such as expensive equipment, high maintenance cost, long growth time and di±cult mass production.…”
Section: Mbementioning
confidence: 99%