High quality of ultra-thin silicon oxynitride films formed by low-energy nitrogen implantation into silicon with additional plasma or thermal oxidation

Infrared spectra of photochemically grown suboxides and oxynitrides at the Si/SiO2 interface

“…This interpretation is supported by previous investigations [22,23]. The absorption bands at 950, 1100 and the shoulder at 1160 cm À1 can be attributed to Si-N and Si-O vibrations.…”

“…3(a) and (b)), however, the LO band is not the strongest one, as in the spectrum of the thinned thermal silicon oxide of 22 nm thickness (see Fig. 3(c) and [22]) and in bulk spectra. In Fig.…”

Ultrathin silicon oxynitride formed by low-energy electron impact plasma nitridation and chemical oxidation methods

“…It is well known that in the practical use of SiO 2 layers as gate insulators, the following obstacles arise: ͑i͒ penetration of boron from poly-Si gate electrodes to SiO 2 and Si and ͑ii͒ high-density leakage current. 4 Several methods have been developed for the formation of silicon nitride and silicon oxynitride layers including ͑i͒ direct nitridation of silicon or SiO 2 using thermal reactions with NH 3 , NO, or N 2 O gas, 4,5,7-9 using plasma-assisted techniques, 10,11 and using an implantation method, 12 and ͑ii͒ deposition of silicon nitride or silicon oxynitride layers using plasma enhanced chemical vapor deposition, 6,13 low-pressure chemical vapor deposition, 14 low-pressure rapid thermal chemical vapor deposition, 15 jet vapor deposition, 16 remote plasma enhanced chemical vapor deposition, 17 electron cyclotron radiation-assisted sputter deposition, 18 and reactive pulsed laser deposition. Nitrogen-containing dielectrics such as silicon oxynitride and silicon nitride have attained much attention because besides their high r ,they show a good resistance to boron penetration 4 -6 and an improvement in the charge-tobreakdown voltage.…”

The Effect of Nitrogen Concentration at Oxynitride Gate Insulators Formed by 28N2 + Implantation into Silicon with Additional Conventional or Rapid Thermal Oxidation

“…Nowadays, much attention has been directed to nitridation by nitrogen or nitric oxide ion implantation [2,5,[7][8][9][10][11][12][13]. Ion implantation provides a low temperature and highly controllable process of nitrogen incorporation [2,5,9,14,15]. In this way, high quality of thin silicon oxynitride films formed by low-energy nitrogen implantation into silicon with additional plasma or thermal oxidation has been reported [15].…”

“…Ion implantation provides a low temperature and highly controllable process of nitrogen incorporation [2,5,9,14,15]. In this way, high quality of thin silicon oxynitride films formed by low-energy nitrogen implantation into silicon with additional plasma or thermal oxidation has been reported [15]. This work reports the electrical and physical characteristics of thin silicon oxynitride gate nMOSFETs and MOS capacitors formed by low-energy nitrogen implantation into silicon with additional conventional or rapid thermal oxidation.…”