Carrier
recombination plays a key role in determining
the performance
of perovskite devices, wherein nonradiative recombination hinders
carrier extraction and limits the performance of perovskite-based
optoelectronic devices (e.g., solar cells and photodetectors). To
reduce nonradiative recombination, passivating the surface and grain
boundary defects with chemicals has been extensively studied. However,
this method has limitations such as pollution, complicated procedures,
etc. Here, we provide a physical approach to reduce the nonradiative
recombination loss of MAPbI3 perovskite thin films using
femtosecond (fs) laser processing. Perovskite thin films processed
by fs laser show an enhanced photoluminescence (PL) intensity, extended
lifetime, smaller grain size, smooth surface, and improved photodetector
performance. The effect of laser processing is attributed to a decrease
in the number of trap centers per grain and polished perovskite surface,
which act as nonradiative recombination centers in the perovskite
thin films. This research provides a promising way to improve the
performance of perovskite optoelectronic devices.