High-quality PbZr0.52Ti0.48O3 films prepared by modified sol–gel route at low temperature

Homogeneity issues in chemical solution deposition of Pb(Zr,Ti)O3 thin films

“…[10][11][12][13] From the early days of CSD the problems of local heterogeneities in the films, expressed, for example, as the appearance of the non-ferroelectric surface pyrochlore phase [14][15][16] or zirconium-rich regions 17 have been recognized. Approaches leading to an improved response of the films preferentially at a lower crystallization temperature have included solution synthesis modifications such as introducing a vacuum distillation 18 or increasing the number of distillations; 19,20 in both cases a more effective removal of acetate groups was achieved. The reactivity of the TM alkoxides towards water has been recognized also as a problem in terms of experimental requirements, as dry atmosphere had to be maintained during solution processing.…”

Enhanced piezoelectric properties of Pb0.8Ca0.2TiO3 thin films prepared at low temperature by a sol–gel process

“…This limits the current application of PCT thin films in electronic devices [5][6][7]. Many efforts have been made to reduce the annealing temperature of sol-gel PCT thin films in previous work, such as using a seed layer, changing the thickness of the thin film, and changing the composition of the precursor solution [8,9]. However, these different methods vary in practicality and alter the performance of the PbTiO 3 (PT) thin film to different degrees.…”

Low-temperature growth of (110)-preferred Pb0.97La0.02(Zr0.88Sn0.10Ti0.02)O3 antiferroelectric thin films on LaNiO3/Si substrate

“…Therefore, the key problem for the low-temperature growth of PZT-based antiferroelectric or ferroelectric films was to lower the nucleation temperature. There were several techniques for the low-temperature deposition of PZT ferroelectric via the sol-gel method, such as the introduction of seeding layers [5], the adoption of unique heat-treatment procedure [6] and the modification of the solution chemistry [7]. However, the lowtemperature preparation of PZT-based antiferroelectric films by sol-gel way has not been reported until now.…”