High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene

Jia, Yanqing; Ning, Jing; Zhang, Jincheng; Wang, Boyu; Yan, Chaochao; Zeng, Yu‐Jia; Wu, Haidi; Zhang, Yachao; Shen, Xue; Zhang, Chi; Guo, Haibin; Wang, Dong; Hao, Yue

doi:10.1021/acsami.1c04659

Cited by 18 publications

(14 citation statements)

References 27 publications

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“…Though vdWE has advantages for the device fabrication, the dislocation density in GaN grown by this method is still as high as 10 9 cm –2 . − For some devices, such as laser diodes, a lower dislocation density is often required. Kim et al reported a technique called remote epitaxy by which a single-crystalline GaN film was achieved on graphene interlayer through a remote atomic interaction between substrates and the epi-layer .…”

Section: Introductionmentioning

confidence: 99%

Remote Epitaxy and Exfoliation of GaN via Graphene

Han

et al. 2022

ACS Appl. Electron. Mater.

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The remote epitaxy of GaN via graphene has attracted much attention due to the potential of easy mechanical exfoliation, and the exfoliated layers can be transferred onto foreign substrates according to the application needs, which is beneficial to improve the performance of GaN-based devices. In this work, a GaN epi-layer was grown by metal–organic chemical vapor deposition on the monolayer-graphene-coated AlN/sapphire or GaN substrates. The influence of growth temperature, carrier gas, and substrate on the exfoliation of the GaN epi-layer was studied. When the growth temperature is no more than 800 °C and N2 is used as the carrier gas, the monolayer graphene can be retained on the AlN/sapphire substrate during the growth process. Thus, the GaN epi-layer can be exfoliated successfully. However, the monolayer graphene will be destroyed under a growth temperature of 850 °C, and lead to the failure of exfoliation. Besides, the monolayer graphene can also be damaged when the H2 carrier gas or GaN substrate is employed with a growth temperature of 800 °C. This causes the GaN epi-layer to be exfoliated not as well. The experimental results illustrate that suitable growth conditions and substrate are important for realizing the exfoliation of a GaN epi-layer.

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Section: Introductionmentioning

confidence: 99%

Remote Epitaxy and Exfoliation of GaN via Graphene

Han

et al. 2022

ACS Appl. Electron. Mater.

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“…proposed a new growth method using the O 2 ‐plasma‐assisted patterned graphene and AlN buffer layer to achieve high‐quality and transferable GaN films, and eventually they succeeded in fabricating high‐performance violet LEDs. [ 38 ] By comparing the growth situation of Al atoms on graphene and sapphire, they found that Al atoms had higher migration distance, lower adsorption energy, and lower nucleation density in the graphene region. Additionally, they investigated the effect of the number of graphene layers on the growth behavior of the AlN buffer layer.…”

Section: Epitaxial Layer Lift‐off Techniques Based On 2d Materialsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy

Song

Chen

Yang

et al. 2023

Adv Funct Materials

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Figure 1. An illustration shows the outline of this review article covering flexible nitride devices and exfoliation techniques based on 2D material implementations. The 2D material-based exfoliation methods are mainly divided into: a) thermal release tape-supported delamination method; ((a1) Reproduced with permission. [37] Copyright 2019, Wiley-VCH. (a2) Reproduced under terms of the CC-BY license. [25] Copyright 2020, The Authors, published by American Association for the Advancement of Science. (a3) Reproduced with permission. [38] Copyright 2021, American Chemical Society.) b) chemical release by etching of a sacrificial layer; ((b1) Reproduced with permission. [39] Copyright 2011, Wiley-VCH. (b2) Reproduced with permission. [40] Copyright 2013, American Institute of Physics. (b3) Reproduced under terms of the CC-BY license. [41] Copyright 2014, The Authors, published by American Institute of Physics.) c) mechanical spalling using the stressor layer; ((c1) Reproduced with permission. [26a] Copyright 2014, Springer Nature. (c2) Reproduced with permission. [42] Copyright 2021, American Chemical Society.) d) the transfer of the epitaxial layer by self-separation. ((d1) Reproduced with permission. [43] Copyright 2020, Elsevier. (d2) Reproduced with permission. [44]

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“…Ning et al [8] obtained a stress-free GaN film with optimal quality and a low density of dislocations on Al 2 O 3 by incorporating a sputtered AlN/Gr composite layer in 2020. Jia et al [9] found that high-quality, large-area and transferable nitride films can be accurately controlled and grown on O 2 plasma-assisted patterned Gr substrates.…”

Section: Introductionmentioning

confidence: 99%

氮掺杂单层石墨烯上无中间层沉积高质量氮化镓

et al. 2023

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GaN on graphene/Al 2 O 3 substrates grown via van der Waals epitaxy compensates for the deficiencies and defects caused by metal-organic chemical vapor deposition (MOCVD) on substrates with significant mismatches to GaN. However, the absence of dangling bonds on graphene leads to insufficient nucleation sites; hence, a thin layer of AlN or ZnO nanowalls should be deposited on graphene as an intermediate layer. In this work, high-quality GaN crystals with a low biaxial compressive stress of 0.023 GPa and low screw dislocation density of 9.76 × 10 7 cm −2 were successfully synthesized by MOCVD on nitrogen-doped graphene without a buffer layer. First-principles calculations demonstrated significant improvement in the adsorption energy of the Ga atom on the surface of nitrogen-doped graphene compared with that of pristine graphene, in agreement with the experimental observations of nucleation. In most cases, GaN films were obtained by forming C-Ga-N and N-Ga-N configurations via atomic nitrogen pretreatment on monolayer graphene. Therefore, it is hoped that the efficient method of atomic modulation of high-quality GaN films grown on nitrogendoped graphene via interface manipulation used in this work will promote the industrial development of innovative semiconductor devices.

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High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene

Cited by 18 publications

References 27 publications

Remote Epitaxy and Exfoliation of GaN via Graphene

Remote Epitaxy and Exfoliation of GaN via Graphene

Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy

氮掺杂单层石墨烯上无中间层沉积高质量氮化镓

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