High quality ultra thin Si/sub 3/N/sub 4/ film selectively deposited on poly-Si electrode by LPCVD with in situ HF vapor cleaning

Dry oxidation resistance of ultrathin nitride films: Ordered and amorphous silicon nitride on Si(111)

“…The work by Yoshimaru et al 23,24 examined generally thicker nitrides to a more aggressive wet O 2 ambient at 1 atm. Importantly, a minimum critical thickness for LPCVD nitride films was identified using ellipsometry to enable effective wet oxidation resistance for times on the order of 30 min at temperatures appropriate for Ta 2 O 5 postdeposition anneals (ϳ850°C͒.…”