High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays

Zhao, Jijie; Liu, Huan; Deng, Lier; Bai, Minyu; Xie, Fei; Wen, Shuai; Liu, Weiguo

doi:10.3390/s21186146

Cited by 12 publications

(6 citation statements)

References 29 publications

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“…The sensitivity to light increases with increasing the bias voltage from 0 to 1 V, and I on /I off values of 98, 350, 580, 980, 1,500, and 2,300 are obtained at bias voltages of 0, 0.2, 0.4, 0.6, 0.8, and 1 V, respectively. This demonstrates that this device is capable of producing and separating electron-hole pairs [36]. Light intensity is also an important factor in determining a photodetector's photocurrent.…”

Section: Resultsmentioning

confidence: 85%

Si:HgTe Colloidal Quantum Dots Heterojunction-Based Infrared Photodiode

Jia

Liu

Zhao

et al. 2023

Journal of Nanomaterials

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Integrated circuits and optoelectronics are currently dominated by silicon technology. However, silicon’s response wavelength is typically less than 1,100 nm, limiting the application of silicon in machine vision, autonomous vehicles, and night vision. For infrared photodetectors, HgTe colloidal quantum dots (CQDs) are promising materials. Because of the adjustable bandgap, it responds over a wide spectral range. However, the construction of a high-quality junction between Si and HgTe CQDs continues to be difficult, thus restricting the scope of its application. In this article, we describe the synthesis, characterization, and correlation of HgTe CQDs with reaction temperature and nanocrystal size. We then fabricated HgTe-CQDs/silicon infrared photodiodes and discussed how the silicon resistivity affected their performance. We found that the devices prepared from 9.1 nm HgTe quantum dots synthesized at 80°C and a silicon substrate with a resistivity of 20–50 Ω·cm has optimal performance parameters. This results in a responsivity of 0.2 mA/W for 1,550 nm incident light at room temperature. These results provide a direction for future silicon-compatible HgTe quantum dot infrared optoelectronics.

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Section: Resultsmentioning

confidence: 85%

Si:HgTe Colloidal Quantum Dots Heterojunction-Based Infrared Photodiode

Jia

Liu

Zhao

et al. 2023

Journal of Nanomaterials

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“…The AgNWs welding technology is applied to simple silicon devices [ 31 ]. The structure of the device is Ag/Si/AgNWs/Ag, in which the upper and lower silver are ring electrodes for eliciting test signals, the silver nanowire is coated on the upper surface of the whole silicon as a transparent electrode, and silicon is the active layer of the whole device.…”

Section: Resultsmentioning

confidence: 99%

Performance Enhancement of Silver Nanowire-Based Transparent Electrodes by Ultraviolet Irradiation

et al. 2022

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Silver nanowires (AgNWs) are used as transparent electrodes (TE) in many devices. However, the contact mode between the nanowires is the biggest reason why the sheet resistance of silver nanowires is limited. Here, simple and effective ultraviolet (UV) irradiation welding is chosen to solve this problem. The influence of the power density of the UV irradiation on welding of the silver nanowires is studied and the fixed irradiation time is chosen as one minute. The range of the UV (380 nm) irradiation power is chosen from 30 mW/cm2 to 150 mW/cm2. First of all, the transmittance of the silver nanowire film is not found to be affected by the UV welding (400–11,000 nm). The sheet resistance of the silver nanowires decreases to 73.9% at 60 mW/cm2 and increases to 127.6% at 120 mW/cm2. The investigations on the UV irradiation time reveal that the sheet resistance of the AgNWs decreases continuously when the UV irradiation time is varied from 0 to 3 min, and drops to 57.3% of the initial value at 3 min. From 3–6 min of the continuous irradiation time, the change of the sheet resistance is not obvious, which reflects the self-limiting and self-termination of AgNWs welding. By changing the wavelength of the UV irradiation from 350–400 nm, it is found that the welding effect is best when the UV wavelength is 380 nm. The average transmittance, square resistance, and the figure of merit of the welded AgNWs at 400–780 nm are 95.98%, 56.5 Ω/sq, and 117.42 × 10−4 Ω−1, respectively. The UV-welded AgNWs are also used in silicon-based photodetectors, and the quantum efficiency of the device is improved obviously.

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“…m is the electron (hole) mobility and D n p ( ) is the diffusion coefficient of electrons (holes). The quantum efficiency (QE), responsivity (R), detectivity (D*), and switch ratio (ratio of light on and light off currents at a given voltage point) [20,[23][24][25] are important parameters of the photodetector. Once the current characteristics of the structure are calculated using SCAPS, these parameters are calculated according to the following equations [26]:…”

Section: Numerical Methodology and Device Structurementioning

confidence: 99%

Design and optimization of the performance of PbS quantum dot based vertical photodetector

Zhu,

Liu,

et al. 2024

Phys. Scr.

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Quantum dots (QDS) are widely used as photoactive materials for various optoelectronic applications, such as light-emitting diodes, photodetectors, lasers, and solar cells, because of their unique and outstanding physical properties for fabricating devices via solution-processing techniques and for varying the sizes of QD to modulate the band gap. In this study, we constructed a numerical model of a vertical photodetector using lead sulfide (PbS) quantum dot layer undergoing ligand exchange treatment with tetrabutylammonium iodide (TBAI) as the light absorption layer to obtain an optimized high-performance photodetector using 1D-Solar Cell Capacitance Simulator (SCAPS) software. For the hole transport layer (HTL) and electron transport layer (ETL), a PbS quantum dot layer that employs an ethanedithiol (EDT) ligand exchange scheme and a zinc oxide (ZnO) layer were utilized, respectively, with gold (Au) and indium tin oxide (ITO) as the bottom and upper electrodes, respectively. After optimizing the thickness and doping concentration of the absorption layer, we obtained a maximum responsivity of 0.4675 A/W and detectivity of 2.44×1013 Jones at a reverse bias of 0.5 volts after optimizing of thickness and doping concentration of absorption layer showing an improvement of 19% and 87.7% respectively compared to the initial structure whose parameters originated from studies of PbS quantum dot solar cells with the same structure and materials, although optimization of other transport layers do not provide as great performance enhancement as absorption layer. This study demonstrates that the structural parameters of solar cells are not always applicable to photodetectors, and that photodetectors have great potential for numerical optimization.

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High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays

Cited by 12 publications

References 29 publications

Si:HgTe Colloidal Quantum Dots Heterojunction-Based Infrared Photodiode

Si:HgTe Colloidal Quantum Dots Heterojunction-Based Infrared Photodiode

Performance Enhancement of Silver Nanowire-Based Transparent Electrodes by Ultraviolet Irradiation

Design and optimization of the performance of PbS quantum dot based vertical photodetector

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