High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition

Wu, Donghai; Durlin, Quentin; Dehzangi, Arash; Zhang, Yiyun; Razeghi, Manijeh

doi:10.1063/1.5058714

Cited by 24 publications

(18 citation statements)

References 29 publications

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“…Improvement in those two fundamental parameters seems to be critical to reach the theoretically predicted T2SLs photodiodes performance. InAsSbnBn [158] T2SLnBn [169] T2SLp-n [174] T2SLp-n [165] T2SLnBn [164] T2SLnBn [169] T2SLnBn [166] T2SLnBn [ Haddadi et al [179] d-diameter of detector; s-square detector.…”

Section: Performance Limitsmentioning

confidence: 99%

“…In this way, SLs material expends the limited spectral range covered by traditional bulk III-V IR detectors based on InGaAs and InSb. Table 4 indicates that the T2SLs InAs/InAsSb detectors are fabricated mainly in two configurations: p-n junction photodiodes (impurity diffusion [178], MBE [164], MOCVD [173,174]) and nBn barrier detectors (mainly MBE). The T2SL InAs/InAsSb photodiodes, as shown in Figure 34, are mainly constructed on P-i-N heterostructures.…”

Section: Superlattice Detector Structuresmentioning

confidence: 99%

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InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Rogalski

Martyniuk

Kopytko

et al. 2020

Sensors

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

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Section: Performance Limitsmentioning

confidence: 99%

Section: Superlattice Detector Structuresmentioning

confidence: 99%

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Rogalski

Martyniuk

Kopytko

et al. 2020

Sensors

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“…However, it is generally believed that the Ga‐related native defects in GaSb would hinder device performance. To overcome problems associated with Ga‐related defects, an alternative SL material, InAs/InAs y Sb 1− y , has been proposed . Moreover, through changes in the layer thicknesses and variation in the arsenic/antimony (As/Sb) ratio, the band structure can be engineered to meet the requirements of the desired working wavelength.…”

Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

“…For example, long‐wavelength infrared photodetectors based on InAs y Sb 1− y SLs have been demonstrated. However, each period of the SL needs to be sufficiently thick to reach the long‐wavelength band . This requirement spreads out the electron and hole wavefunctions with a small overlap, resulting in low luminescence efficiency .…”

Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

“…Furthermore, a reduced Ga content may decrease the number of Ga‐related defects relative to that in the InAs/GaSb system. In addition, a neoteric fractional monolayer alloy (FMA) epitaxy strategy was used to obtain high‐quality InAs(Sb)/In x Ga 1− x As y Sb 1− y SLs with high In content in the immiscibility gap, and this method enables easy adjustment of SL parameters, such as alloy composition and layer structure and thickness. Therefore, we can manipulate the mini‐bandgap and tune the emission wavelength of this type of SL.…”

Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

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Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fang

Gong

et al. 2019

Physica Rapid Research Ltrs

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Infrared optoelectronic devices based on type‐II superlattice structures of III–V semiconductor materials have progressed significantly during the past decades. Exploring and further expanding the material space is of great significance for the development of infrared applications. Herein, a superlattice structure based on InAs(Sb)/InxGa1−xAsySb1−y grown using a fractional monolayer alloy process to control the superlattice composition and structure is presented. High‐order satellite peaks with a narrow full width at half maximum (31 arcs) in the X‐ray diffraction patterns indicate the good crystal quality of the superlattices. Transmission electron microscopy (TEM) with energy‐dispersive spectroscopy (EDS) analysis validate the fractional monolayer alloy growth method. Photoluminescence measurements and k·p model calculations reveal the superior optical properties of the superlattice (sevenfold higher intensity than that of InAs/GaSb). In addition, the flexible control over the superlattice structure afforded by the method allows miniband engineering to cover the mid‐wavelength and long‐wavelength infrared regions. This work highlights the great potential of InAs(Sb)/InxGa1−xAsySb1−y superlattices in infrared optoelectronic devices.

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Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition

Cited by 24 publications

References 29 publications

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

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High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition

Cited by 24 publications

References 29 publications

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

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Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice