High rate deposition of μc-Si with plasma gun CVD

Imajyo, Nobuhiko

doi:10.1016/0022-3093(96)00090-7

Cited by 13 publications

(3 citation statements)

References 4 publications

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“…To overcome the difficulty, several high-density plasma sources have been developed, such as very high frequency (VHF) plasma, inductively coupled plasma (ICP) and surface wave plasma (SWP). [2][3][4][5][6] To date, we have studied high-density, lowtemperature microwave plasma utilizing a spoke antenna and applied it for the fast deposition of c-Si films to Si thin-film solar cells. [7][8][9] This microwave plasma shows a high density of 10 11{12 cm À3 and a low temperature of 1-2 eV in Ar, and is uniform and stable up to 30 Torr.…”

Section: Introductionmentioning

confidence: 99%

Plasma Parameters for Fast Deposition of Highly Crystallized Microcrystalline Silicon Films Using High-Density Microwave Plasma

Jia

Saha

Shirai

2006

jjap

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The Breit interaction between the incident and atomic K-shell electrons is introduced in the calculation of the triple differential cross section of the K-shell ionization of heavy atoms by very energetic electrons (∼300 keV). As the total spin is not conserved, all possible spin states of the three-electron system in the initial and final states are taken into account. The results obtained by a Dirac plane wave description of the continuum electrons and a relativistic heliumlike bound state wavefunction, show a net improvement with respect to our recent calculations employing the same description without the Breit interaction. †

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Section: Introductionmentioning

confidence: 99%

Plasma Parameters for Fast Deposition of Highly Crystallized Microcrystalline Silicon Films Using High-Density Microwave Plasma

Jia

Saha

Shirai

2006

jjap

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“…Besides, the high crystallinity μc-Si:H is always favorable to the giant microelectronics like thin-film transistors (TFTs) [8,9]. Therefore, In this work the influence of substrate temperature on the μc-Si:H film structure and properties was exploited when micro-hollow cathode (MHC) plasma was used for a plasma enhanced chemical vapor deposition (PECVD) process.…”

Section: Introductionmentioning

confidence: 99%

The influence of substrate temperature on the hydrogenated microcrystalline silicon growth through hollow cathode plasma

Wang

Chen

et al. 2015

Materials Science in Semiconductor Processing

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“…Other approaches using arc discharges (plasma torches) also showed high deposition rates [41]. However, such highly confined plasma discharges are generally not directly transferable to large-area solar module manufacturing.…”

Section: Deposition Rate Of Microcrystalline Siliconmentioning

confidence: 99%

Microcrystalline silicon and micromorph tandem solar cells

Keppner¹,

Meier

Torres

et al. 1999

Applied Physics A: Materials Science & Processing

266

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Abstract. "Micromorph" tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchâtel, based on the VHF-GD (very high frequency glow discharge) deposition method. The key element of the micromorph cell is the hydrogenated microcrystalline silicon bottom cell that opens new perspectives for low-temperature thin-film crystalline silicon technology. According to our present physical understanding microcrystalline silicon can be considered to be much more complex and very different from an ideal isotropic semiconductor. So far, stabilized efficiencies of about 12% (10.7% independently confirmed) could be obtained with micromorph solar cells. The scope of this paper is to emphasize two aspects: the first one is the complexity and the variety of microcrystalline silicon. The second aspect is to point out that the deposition parameter space is very large and mainly unexploited. Nevertheless, the results obtained are very encouraging and confirm that the micromorph concept has the potential to come close to the required performance criteria concerning price and efficiency.The justification of worldwide, intensified research on thinfilm solar cells is not based on a lack of success in the efficiency performance of wafer-based silicon or GaAs technologies. It is based on a lack of hope in the cost reduction potential of wafer-based technology. Indeed, in order to render photovoltaics a competitive energy source in future, it is imperative to adopt the approach of low-cost solar cells.

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High rate deposition of μc-Si with plasma gun CVD

Cited by 13 publications

References 4 publications

Plasma Parameters for Fast Deposition of Highly Crystallized Microcrystalline Silicon Films Using High-Density Microwave Plasma

Plasma Parameters for Fast Deposition of Highly Crystallized Microcrystalline Silicon Films Using High-Density Microwave Plasma

The influence of substrate temperature on the hydrogenated microcrystalline silicon growth through hollow cathode plasma

Microcrystalline silicon and micromorph tandem solar cells

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