High rate PECVD of a-Si alloys on large areas

Röhlecke, S.; Tews, R.; Kottwitz, A.; Schade, K.

doi:10.1016/0257-8972(95)08234-4

Cited by 10 publications

(4 citation statements)

References 14 publications

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“…This is a very important issue for industry, as it offers the possibility of coating large areas and increasing the deposition throughput, 7,8 especially in the production of polymers, 9,10 flat panel displays, 11,12 and both functional and protective coatings. [13][14][15][16][17] Moreover, this technology has permitted the development of more sophisticated equipment with additional ionization sources 18,19 and has led to the production of innovative materials. Specifically, the use of an asymmetric bipolar pulsed-dc power source operating between 50 and 350 kHz is advantageous for the effective PECVD of DLC films.…”

Section: Introductionmentioning

confidence: 99%

Plasma parameters of pulsed-dc discharges in methane used to deposit diamondlike carbon films

Corbella

Rubio‐Roy

Bertrán

et al. 2009

Journal of Applied Physics

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Here we approximate the plasma kinetics responsible for diamondlike carbon ͑DLC͒ depositions that result from pulsed-dc discharges. The DLC films were deposited at room temperature by plasma-enhanced chemical vapor deposition ͑PECVD͒ in a methane ͑CH 4 ͒ atmosphere at 10 Pa. We compared the plasma characteristics of asymmetric bipolar pulsed-dc discharges at 100 kHz to those produced by a radio frequency ͑rf͒ source. The electrical discharges were monitored by a computer-controlled Langmuir probe operating in time-resolved mode. The acquisition system provided the intensity-voltage ͑I-V͒ characteristics with a time resolution of 1 s. This facilitated the discussion of the variation in plasma parameters within a pulse cycle as a function of the pulse waveform and the peak voltage. The electron distribution was clearly divided into high-and low-energy Maxwellian populations of electrons ͑a bi-Maxwellian population͒ at the beginning of the negative voltage region of the pulse. We ascribe this to intense stochastic heating due to the rapid advancing of the sheath edge. The hot population had an electron temperature T e hot of over 10 eV and an initial low density n e hot which decreased to zero. Cold electrons of temperature T e cold ϳ 1 eV represented the majority of each discharge. The density of cold electrons n e cold showed a monotonic increase over time within the negative pulse, peaking at almost 7 ϫ 10 10 cm −3 , corresponding to the cooling of the hot electrons. The plasma potential V p of ϳ30 V underwent a smooth increase during the pulse and fell at the end of the negative region. Different rates of CH 4 conversion were calculated from the DLC deposition rate. These were explained in terms of the specific activation energy E a and the conversion factor x dep associated with the plasma processes. The work deepens our understanding of the advantages of using pulsed power supplies for the PECVD of hard metallic and protective coatings for industrial applications ͑optics, biomedicine, and electronics͒.

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Section: Introductionmentioning

confidence: 99%

Plasma parameters of pulsed-dc discharges in methane used to deposit diamondlike carbon films

Corbella

Rubio‐Roy

Bertrán

et al. 2009

Journal of Applied Physics

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“…The existing methods of plasma generation for PECVD can be conventionally subdivided into two groups: discharge and beam ones. The first group includes the techniques where plasma is generated in low-pressure discharges, such as a glow discharge [54], vacuum arc [55], HF- [56], or UHF- [57] discharge. The beam group includes the use of electron beams [58], laser radiation [59], and, in a number of cases, ion beams [60].…”

Section: Plasma-enhanced Chemical Methodsmentioning

confidence: 99%

Electron-Beam Synthesis of Dielectric Coatings Using Forevacuum Plasma Electron Sources (Review)

et al. 2022

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This is a review of current developments in the field of ion-plasma and beam methods of synthesis of protective and functional dielectric coatings. We give rationales for attractiveness and prospects of creating such coatings by electron-beam heating and following evaporation of dielectric targets. Forevacuum plasma electron sources, operating at elevated pressure values from units to hundreds of pascals, make it possible to exert the direct action of an electron beam on low-conductive materials. Electron-beam evaporation of aluminum oxide, boron, and silicon carbide targets is used to exemplify the particular features of electron-beam synthesis of such coatings and their parameters and characteristics.

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“…In fact, a practical optimum frequency is used around 60-70 MHz [478,479], which provides a good compromise between high deposition rate and attainability of uniform deposition. Further, the use of a distributed RF electrode network where all nodes have identical amplitude and phase improves the homogeneity of deposition [480].…”

Section: Viiia1 Generalmentioning

confidence: 99%

Methods of deposition of hydrogenated amorphous silicon for device applications

Sark

2002

Handbook of Thin Films

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High rate PECVD of a-Si alloys on large areas

Cited by 10 publications

References 14 publications

Plasma parameters of pulsed-dc discharges in methane used to deposit diamondlike carbon films

Plasma parameters of pulsed-dc discharges in methane used to deposit diamondlike carbon films

Electron-Beam Synthesis of Dielectric Coatings Using Forevacuum Plasma Electron Sources (Review)

Methods of deposition of hydrogenated amorphous silicon for device applications

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