High rate sapphire (Al2O3) etching in inductively coupled plasmas using axial external magnetic field

Kim, D.W.; Jeong, Chang Hyun; Kim, K.N.; Lee, Hyoyoung; Kim, H.S.; Sung, Youngje; Yeom, Geun‐Young

doi:10.1016/s0040-6090(03)00334-1

Cited by 39 publications

(23 citation statements)

References 11 publications

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“…This difference between argon and molecular gas plasmas has been observed in high-density systems by other authors. 16,21,28 In electronegative gases, it can be explained by an increase of the negative ion density with pressure. However, our etching process gases are not electronegative.…”

Section: Influence Of Powers and Pressurementioning

confidence: 99%

Inductively coupled plasma etching of HgCdTe using a CH4-based mixture

Laffosse

Baylet

Chamonal

et al. 2005

Journal of Elec Materi

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We report results on a study on inductively coupled plasma (ICP) etching of HgCdTe using a CH 4 -based mixture. Effects of key process parameters on etch rates were investigated and are discussed in this article in light of plasma parameter measurements, performed using a Langmuir probe. Process parameters of interest include ICP source power, substrate power, pressure, and CH 4 concentration. We show that the ICP etching technique allows us to obtain etch rates of about 200 nm/min, which is high enough to use this technique in a manufacturing process. We also observe that the ion bombardment has a strong influence on HgCdTe etch rate. Finally, we show that this etch rate is modified by the substitution of methane for hydrogen.

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Section: Influence Of Powers and Pressurementioning

confidence: 99%

Inductively coupled plasma etching of HgCdTe using a CH4-based mixture

Laffosse

Baylet

Chamonal

et al. 2005

Journal of Elec Materi

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“…(11,12) In particular, the number of reports on the pattern size control and its effect on the light efficiency of the LEDs is limited in the wet-etched PSS, although the effect of pattern size on the light output of the LEDs has been reported in the dryetched PSS. (13)(14)(15)(16) In this work, we investigate the pattern size control mechanism of the wet-etched PSS and evaluate the effect of pattern size on the efficiency of GaN-based LEDs. We demonstrate that pattern height, top diameter, and bottom diameter can be controlled by etching conditions, particularly, the etching time and diameter of the etching mask.…”

Section: Introductionmentioning

confidence: 99%

Sapphire Substrate Processing for High-Performance GaN-Based Light-Emitting Diodes -Micropatterning of Sapphire Substrates and Its Effect on Light Enhancement in GaN-Based Light-Emitting Diodes-

2014

Sensors and Materials

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We investigated the pattern size control mechanism of patterned sapphire substrates (PSSs) fabricated by wet etching and evaluated the effect of the pattern size of the PSSs on the efficiency of light-emitting diodes (LEDs). It was found that the pattern height, top diameter, and bottom diameter can be controlled by the etching time and diameter of the etching mask. The angle of side surfaces of patterns showed a constant value, which corresponds to the {1012} plane of sapphire crystals, when changing the etching time and diameter of the etching mask. On the basis of the pattern size control mechanism that we have established, PSSs with different diameters were successfully fabricated and the efficiency of the LEDs on the PSSs was evaluated. As a result, the light output of the LEDs on a PSS with the largest pattern diameter in this study was 1.2 times higher than that on planar sapphire. In addition, it was shown that the light intensity of the LEDs proportionally increases with increasing pattern diameter of the PSS, suggesting that the area of the side surface for patterns could affect the increase in the light intensity of the LEDs.

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“…Its hardness causes conventional techniques, such as mechanical sawing, to be inefficient when precision cutting is required, due to surrounding mechanical damage and excessive tool wear. As Sapphire is inert to most types of wet chemicals and dry etcing, other methods such as laser assisted etching [1], enhanced etching by ion implementation [2] and plasma etching [3] have been investigated, yet none has produced satisfactory results. Laser ablation has also been proposed as a potential machining technique.…”

Section: Introductionmentioning

confidence: 99%