High rectification efficiency direct bandgap Ge1−xSnx Schottky diode for microwave wireless power transfer

Song, Jialin; Zhao, Xin-Yan; Wu, Xuemei; Rong-Xi, Xuan

doi:10.1007/s00339-019-3002-1

Cited by 4 publications

(2 citation statements)

References 15 publications

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“…The Ge 1x Sn x alloy is expected to exhibit a direct band-gap for Sn compositions of 10 at% (x = 0.1) and above, as required for laser fabrication [32][33][34]. However, the maximum Sn solubility limit in Ge is ~ 1.1 at % at 673 K [35][36].…”

Section: Introductionmentioning

confidence: 99%

Ge(Sn) growth on Si(001) by magnetron sputtering

Khelidj

Portavoce

Bertoglio

et al. 2021

Materials Today Communications

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The semi-conductor Ge 1x Sn x exhibits interesting properties for optoelectronic applications. In particular, Ge 1x Sn x alloys with x  0.1 exhibit a direct band-gap, and integrated in complementary-metal-oxide-semiconductor (CMOS) technology, should allow the development of Si photonics. CMOS-compatible magnetron sputtering deposition was shown to produce monocrystalline Ge 1x Sn x films with good electrical properties at low cost. However, these layers were grown at low temperature (< 430 K) and contained less than 6% of Sn. In this work, Ge 1x Sn x thin films were elaborated at higher temperature (> 600 K) on Si(001) by magnetron sputtering in order to produce low-cost and CMOS-compatible relaxed pseudocoherent layers with x ≥ 0.1 exhibiting a better crystallinity. Ge 1x Sn x crystallization and Ge 1x Sn x crystal growth were investigated. Crystallization of an amorphous Ge 1x Sn x layer deposited on Si(001) or Ge(001) grown on Si(001) leads to the growth of polycrystalline films. Furthermore, the competition between Ge/Sn phase separation and Ge 1x Sn x growth prevents the formation of large-grain Sn-rich Ge 1x Sn x layers without the formation of -Sn islands on the layer surface, due to significant atomic redistribution kinetics at the crystallization temperature (T = 733 K for x = 0.17). However, the growth at T = 633 K of a highly-relaxed pseudo-coherent Ge 0.9 Sn 0.1 film with low impurity concentrations (< 2 × 10 19 at cm 3 ) and an electrical resistivity four orders of 2 magnitude smaller than undoped Ge is demonstrated. Consequently, magnetron sputtering appears as an interesting technique for the integration of optoelectronic and photonic devices based on Ge 1x Sn x layers in the CMOS technology.

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Section: Introductionmentioning

confidence: 99%

Ge(Sn) growth on Si(001) by magnetron sputtering

Khelidj

Portavoce

Bertoglio

et al. 2021

Materials Today Communications

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“…Compared with other wireless power supply devices, WSNs have special features such as low power, wide distribution and a great number of sensors. Other WPT technologies, such as inductive coupling, microwave, laser and ultrasonic, cannot also satisfy the features of WSNs because of short transmission distance, low transmission efficiency, poor directivity and low safety [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

A Novel Single-Wire Power Transfer Method for Wireless Sensor Networks

Wang

Zhai

et al. 2020

Energies

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Wireless sensor networks (WSNs) have broad application prospects due to having the characteristics of low power, low cost, wide distribution and self-organization. At present, most the WSNs are battery powered, but batteries must be changed frequently in this method. If the changes are not on time, the energy of sensors will be insufficient, leading to node faults or even networks interruptions. In order to solve the problem of poor power supply reliability in WSNs, a novel power supply method, the single-wire power transfer method, is utilized in this paper. This method uses only one wire to connect source and load. According to the characteristics of WSNs, a single-wire power transfer system for WSNs was designed. The characteristics of directivity and multi-loads were analyzed by simulations and experiments to verify the feasibility of this method. The results show that the total efficiency of the multi-load system can reach more than 70% and there is no directivity. Additionally, the efficiencies are higher than wireless power transfer (WPT) systems under the same conductions. The single-wire power transfer method could satisfy the characteristics of WSNs and effectively solve the problem of poor power supply reliability.

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