“…LM Al 1−x In x N has also a great potential for the application in highly-reflecting distributed Bragg reflectors (DBRs), light-emitting diodes (LEDs), laser diodes (LDs), detectors and sensors [6,7,8,9,10]. Recently, high reflectivity airgap distributed Bragg reflectors were fabricated by wet eching of LM AlInN sacrificial layers [11,12,13] and microdisk (µ-disk) technology, which is used for the new advanced devices, was developed [14]. In the work of Watson et al it was demonstrated that the additional insertion of LM AlInN layer into IIInitride multilayer structures grown on free-standing GaN substrate facilitates the in situ reflectence measurements, which allow accurate controll of layer thicknesses [15].…”