High reliability in low noise InGaP gated PHEMTs

Abstract

Vcs= -1.5 V to 0.3 V in 0.3 V step Stress@Vv,= 6v, vGS= o v -before stress --stresstor6Ominr . . -stressfor18Omins Abstract This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were I n~.~~G a~.~~P / l n~.~~G a~.~~ As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 ~1 6 0 ,urn2. The DC-stress conditions are I ) VDs = 6V, V& = OV and 2) IG = -8 m4 (SOmA/mm). The ranging of thermal-stress is from IO0 "c to 250 "c. The noise characteristics were measured at 12 GHz and DC bias condition is VDs = 2 V, IDS = I O mA.The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noisefigure, NF,, and associated power gain, G, after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.