High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator

Wang, Limin; Qin, Haitao; Zhang, Wei; Zhang, Long; Yan, Donghang

doi:10.1016/j.tsf.2013.07.044

Cited by 13 publications

(13 citation statements)

References 19 publications

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“…There are several MTG methods with different molecular template materials and growth behaviors, including multiphenyl- and multithiophene-based MTG, perylene-derivative MTG, acene MTG, and graphene/graphene oxide template growth. For example, much research progress into the weak epitaxy growth (WEG) method based on multiphenyl and multithiophene molecular templates has been achieved during the past several years, including extensions to new template layer materials and overlayer materials and new applications in organic electronics and optoelectronics. − Here, we summarize all research progress in this area to provide a better understanding of MTG and its applications.…”

Section: Introductionmentioning

confidence: 99%

Molecular Template Growth and Its Applications in Organic Electronics and Optoelectronics

Yang¹,

2015

Self Cite

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Section: Introductionmentioning

confidence: 99%

Molecular Template Growth and Its Applications in Organic Electronics and Optoelectronics

Yang¹,

2015

Self Cite

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“…In this respect, Tables II and III present details of very recent vapor phase deposition techniques of SiN x thin films, along with a synopsis of intended applications. 15,16,[20][21][22][23][24][25][31][32][33][34][36][37][38] More specifically, Table II summarizes PVD and CVD work, while Table III focuses exclusively on atomic layer deposition ALD.…”

mentioning

confidence: 99%

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Kaloyeros

Jové

Goff

et al. 2017

ECS J. Solid State Sci. Technol.

133

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This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.

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“…on the para-sexiphenyl (p-6P) monolayer) due to measurement at a relatively lower effective gate voltage and low crystallinity in VOPc thin films [19,21,25]. In the case of the bare SiO 2 layer, the surface contains a large number of polar silanol (Si-OH) groups, due to the air humidity and water (depending upon processing history), that act as a trap centre and result in the SiO 2 substrate being hydrophilic in nature.…”

Section: Effect Of Surface Modification On Various Ofet Device Paramementioning

confidence: 99%

“…Under vacuum conditions, the performance of VOPc based OFET has been reported to be good using very thin (~3 nm) ordered para-hexaphenyl (p-6P) layer as a substrate modification and SiN x as the gate dielectric layers [19][20][21]. However, this requires extra steps to fabricate the device and leads to cost escalation.…”

Section: Introductionmentioning

confidence: 99%

Ambient condition bias stress stability of vanadium (IV) oxide phthalocyanine based p-channel organic field-effect transistors

Obaidulla¹,

Singh²,

Mohapatra³

et al. 2017

J. Phys. D: Appl. Phys.

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High bias-stress stability and low threshold voltage (V th) shift under ambient conditions are highly desirable for practical applications of organic field-effect transistors (OFETs). We demonstrate here a 20-fold enhancement in the bias-stress stability for hexamethyledisilazane (HMDS) treated vanadium (IV) oxide phthalocyanine (VOPc) based OFETs as compared to the bare VOPc case under ambient conditions. VOPc based OFETs were fabricated on bare (non treated) SiO 2 and a HMDS monolayer passivated SiO 2 layer, with an operating voltage of 40 V. The devices with top contact gold (Au) electrodes exhibit excellent p-channel behavior with a moderate hole mobility for the HMDS-treated device. It is demonstrated that the time dependent ON-current decay and V th shift can be effectively controlled by using self-assembled monolayers of HMDS on the VOPc layer. For the HMDS-treated case, the bias stress stability study shows the stretched exponential decay of drain current by only ~15% during the longterm operation with constant bias voltage under ambient conditions, while it shows a large decay of >70% for the nontreated devices operated for 1000 s. The corresponding characteric decay time constant (τ) is 10 4 s for the HMDS treated case, while that of the the non-treated SiO 2 case is only ~480 s under ambient conditions. The inferior performance of the device with bare SiO 2 is traced to the charge trapping at the voids in the inter-grain region of the films, while it is almost negligible for the HMDS-treated case, as confirmed from the AFM and XRD analyses. It is believed that HMDS treatment provides an excellent interface with a low density of traps and passivates the dangling bonds, which improve the charge transport characteristics. Also, the surface morphology of the VOPc film clearly influences the device performance. Thus, the HMDS treatment provides a very attractive approach for attaining long-term air stability and a low V th shift for the VOPc based OFET devices.

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High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator

Cited by 13 publications

References 19 publications

Molecular Template Growth and Its Applications in Organic Electronics and Optoelectronics

Molecular Template Growth and Its Applications in Organic Electronics and Optoelectronics

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Ambient condition bias stress stability of vanadium (IV) oxide phthalocyanine based p-channel organic field-effect transistors

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