High Resistivity GaN Single Crystalline Substrates

Porowski, S.; Boćkowski, Michał; Łucznik, B.; Grzegory, I.; Wróblewski, M.; Teisseyre, H.; Leszczyński, M.; Litwin‐Staszewska, E.; Suski, T.; Trautman, P.; Pakuła, K.; Baranowski, J. M.

doi:10.12693/aphyspola.92.958

Cited by 35 publications

(15 citation statements)

References 5 publications

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“…The defects were also studied using Electron Energy Loss Spectroscopy (EELS) to determine their composition, as well as positron annihilation to determine the presence of vacancies and their conglomerations. Two types of samples have been studied: bulk samples grown by the high nitrogen pressure method from a solution of liquid gallium containing 0.1-0.5 at % Mg [15] and samples grown by MOCVD described earlier [16] using Cp 2 Mg at 1030°C.…”

Section: Methods Used In These Studiesmentioning

confidence: 99%

Atomic Structure of Defects in GaN:Mg Grown with Ga Polarity

et al. 2004

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Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {1123} planes seen in cross-section as triangulars. Some other defects appear in crosssection as trapezoidal (rectangular) defects as a result of presence of truncated pyramids.

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Section: Methods Used In These Studiesmentioning

confidence: 99%

Atomic Structure of Defects in GaN:Mg Grown with Ga Polarity

et al. 2004

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“…The crystals are highly n-type which is most probably due to the incorporation of oxygen impurity into the crystal lattice. The addition of about 0.1 at% of magnesium into the growth solution leads to the change in the physical properties of the grown material [2]. As it was shown recently [3], with increasing Mg concentration, the crystals become highly resistive with hopping type conductivity at low temperatures changing eventually to the p-type with an activation energy of about 150 meV, at higher temperatures.…”

Section: Introductionmentioning

confidence: 92%

Micro Defects in Nearly Dislocation Free GaN Doped with Mg during High Pressure Crystallization

Grzegory¹,

Kozubowski

Borysiuk

et al. 1999

phys. stat. sol. (b)

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“…Bulk crystals were grown by the high nitrogen pressure method [8] from a solution of liquid gallium containing 0.1-0.5 at% Mg [9]. Similar procedure was applied to GaN : Be crystals.…”

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confidence: 99%

Influence of Dopants on Defect Formation in GaN

Liliental‐Weber

Jasiński

Benamara

et al. 2001

phys. stat. sol. (b)

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Subject classification:68.37Lp; S7.14 Influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN:Mg and GaN:Be crystals grown by a high pressure and high temperature process and GaN:Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering in bulk GaN:Mg on cplane (formation of Mg-rich planar defects with characteristics of inversion domains) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects empty inside (pinholes) were observed. Both these defects were also observed in MOCVD grown crystals. Pyramidal defects were also observed in the bulk GaN:Be crystals.

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High Resistivity GaN Single Crystalline Substrates

Cited by 35 publications

References 5 publications

Atomic Structure of Defects in GaN:Mg Grown with Ga Polarity

Atomic Structure of Defects in GaN:Mg Grown with Ga Polarity

Micro Defects in Nearly Dislocation Free GaN Doped with Mg during High Pressure Crystallization

Influence of Dopants on Defect Formation in GaN

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