High-resistivity GaSb bulk crystals grown by the vertical bridgman method

Pino, Robinson E.; Ko, Youngok; Dutta, P.S.

doi:10.1007/s11664-004-0028-7

Cited by 15 publications

(4 citation statements)

References 23 publications

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“…Also, there is no observed decrease in transmission with increasing wavelength, clearly demonstrating the high optical quality of the grown crystals and low native defect content. These observations indicate that these InAsP wafers show improved optical quality over other III-V bulk ternary alloys such as InGaSb reported earlier, [15][16][17][18][19][20] where a significant reduction in transmission was seen even for wavelengths corresponding to photon energies below the bandgap energy. It is also interesting to mention that the transmission spectra for these wafers are not affected by the local compositional inhomogeneity seen in Fig.…”

Section: Methodssupporting

confidence: 60%

Electrical and Optical Characterization of Melt-Grown Bulk InAs1−y P y Crystals

Wei

Barnes

Guha

et al. 2010

Journal of Elec Materi

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Bulk ternary InAs 1Ày P y polycrystals with diameters up to 50 mm were grown from a pseudobinary InP-InAs melt using the vertical Bridgman technique. Electrical and optical properties were investigated as functions of alloy composition and sample temperature. As-grown undoped crystals have been found to exhibit n-type conductivity irrespective of alloy composition. Though the bulk InAs 1Ày P y substrates show high optical transmission out to long wavelengths as well as high carrier mobility, they exhibit random compositional fluctuations across the substrate area.

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Section: Methodssupporting

confidence: 60%

Electrical and Optical Characterization of Melt-Grown Bulk InAs1−y P y Crystals

Wei

Barnes

Guha

et al. 2010

Journal of Elec Materi

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“…Details of the crystal growth experiment can be found elsewhere. 17 Considering the fact that undoped GaSb has 1 -2 ϫ 10 17 cm −3 acceptors and the segregation coefficient of Te in GaSb is 0.37, the initial Te concentration in the melt was set at 1 ϫ 10 18 cm −3 in order to obtain a p-type to n-type transition at approximately midway along the growth axis of the boule. 17 After the growth process, the ingots were sliced perpendicular to the growth axis to extract wafers.…”

Section: Experimental Descriptionmentioning

confidence: 99%

Enhanced terahertz emission from impurity compensated GaSb

et al. 2005

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We report femtosecond optically excited terahertz ͑THz͒ emission from tellurium doped GaSb at room temperature. The influence of the majority and minority carrier type and concentrations on the strength of the THz emission is investigated. Strong enhancement of THz emission in GaSb is observed as a result of compensation of native acceptors by tellurium donors. Surface field acceleration and the photo-Dember effect are identified as THz emission mechanisms in GaSb and modeled in dependence of the majority and minority carrier type and concentrations in our GaSb samples. THz emission from p-type GaSb is dominated by the photo-Dember effect whereas THz emission from n-type GaSb is dominated by surface field acceleration. The doping conditions under which THz emission is maximized are identified.

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“…The increase of donor concentration and the conductivity to 10 2 times, with little variation of mobility, in the Te-doping ingots (Figure 2 (e) and 2 (f)) is very interesting, and can be understood with a V Sb native defects compensation. The native defects In Sb , Ga Sb and V Sb are considered p-type and tellurium substitutional defect (Te Sb ) is n-type, in GaInSb lattice (Pino et al, 2004). Therefore, Te Sb defect should compensate those acceptor defects, contributing to lattice hardening and better crystallographic organization and indium distribution, as shown in Figure 2 (b) and (d).…”

Section: Discussionmentioning

confidence: 99%

Effects of Te additions and stirring in the In segregation in Ga1-xInxSb alloys

et al. 2016

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The influence of tellurium in the indium segregation of Ga 1-x In x Sb:Te ingots obtained by the conventional vertical Bridgman method (CVBM), under stirred and nonstirred conditions, was investigated. Three Te-doped ingots and three no-doped ingots were unidirectionally solidified at a constant speed of 2.0 mm/hour, inside quartz ampoules, closed under argon, and with a conical tip. The furnace temperature was set for overheating between 73.5-93°C, and temperature gradients between 3.0-3.3°C/mm. The tellurium doped ingots showed a smaller number of grains and no cracks in the middle region of the ingots, right after the tip, in comparison with the no-doped ingots. Moreover, when comparing the stirred with the non-stirred ingots, the EDS experimental profile of indium in Te-doped synthetized without melt stirring ingot showed a better agreement with the Scheil-Gulliver equation than the stirred Tedoped ingots. The Te-doped ingots when stirring the melt during synthesis showed a more constant axial indium distribution, up to 85% of their lengths. The constant lattice estimated from TEM diffraction images are respectively 6.29 Å for the non-doped sample and 6.17 Å for the Te-doped sample. A qualitative account for the increase of the lattice parameter and the Hall measurements results is that the tellurium compensates for the native acceptor defects, contributing to the microstructural quality in the Ga 1-x In x Sb ingots.

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High-resistivity GaSb bulk crystals grown by the vertical bridgman method

Cited by 15 publications

References 23 publications

Electrical and Optical Characterization of Melt-Grown Bulk InAs1−y P y Crystals

Electrical and Optical Characterization of Melt-Grown Bulk InAs1−y P y Crystals

Enhanced terahertz emission from impurity compensated GaSb

Effects of Te additions and stirring in the In segregation in Ga1-xInxSb alloys

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