We report subpicosecond electro-optic measurements of the length of individual relativistic electron bunches. The longitudinal electron-bunch shape is encoded electro-optically on to the spectrum of a chirped laser pulse. The electron-bunch length is determined by analyzing individual laser-pulse spectra obtained with and without the presence of an electron bunch. Since the length of the chirped laser pulse can be easily changed, the electron bunch can be visualized on different time scales. This single-shot imaging technique is a promising method for real-time electron-bunch diagnostics.

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Ultrafast dynamics of free carriers in low-temperature grown GaAs was studied using time-domain terahertz emission spectroscopy. The subpicosecond free-carrier lifetime was determined for a set of annealed samples with different growth temperatures ͑175-250°C͒, the carrier mobility was also estimated. The influence of the growth temperature on the ultrafast carrier trapping is discussed.

We report on optically excited terahertz (THz) emission by indium nitride (InN) thin films. We have used 70 fs titanium–sapphire laser pulses with wavelengths at 800 nm to generate THz-radiation pulses. The InN thin films are deposited on sapphire substrates with GaN buffer layer by molecular-beam epitaxy. The THz-radiation emitted from the InN surface is significantly stronger than that of the GaN/InN interface. The origin of the THz emission are transient photocarrier currents. These results are in agreement with recent experimental results of InN which show that this material is a small band-gap semiconductor. The magnitude of the THz emission from the InN is strong compared to THz emission from previously investigated semiconductors.