High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

Kukurudziak, M. S.; Andreeva, Olga P.; Lipka, V. M.

doi:10.15222/tkea2020.5-6.16

Cited by 5 publications

(6 citation statements)

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“…Для напівпровідників із менш різкою залежністю коефіцієнта поглинання від довжини хвилі, наприклад Si, максимум спектральної характеристики в залежності від конструкції ФП і технології може змінюватися в широкому діапазоні від коротких довжин хвиль (близько 0,6 мкм) аж до краю власного поглинання (близько 1,1 мкм). Зазвичай для Si λmax=0,8-0,9 мкм [4] Особливу увагу на ринку приділяють кремнієвим ФП для детектування випромінювання YAG-лазера з λ=1,064 мкм, зокрема одно-чи багатоелементним p-i-n фотодіодам (ФД) [5][6][7]. Відповідно, забезпечення максимальної фоточутливості при даній довжині хвилі є актуальним науково-технічним завданням.…”

Section: Iunclassified

Analysis of the Spectral Characteristics of the Responsivity of Diffusion p-i-n Photodiode Based on High Resistivity p-Si

Kukurudziak¹

2023

Microsyst., Electron. & Acoust.

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This Taking into account the market need for highly responive silicon p-i-n photodiodes (PD) for detecting YAG-laser radiation (wavelength 1.064 μm), it was decided to investigate methods of increasing their responsivity, in particular, shifting the maximum of the spectral responsivity characteristic of the photodetector towards longer wavelengths, as well as to analyze the influence of various technological factors in its appearance. Research was conducted on silicon four-element p-i-n photodiodes with guard ring, manufactured by diffusion-planar and mesa technology. Single crystal p-type silicon with [111] orientation, resistivity of 13-21 kΩ and life time of minor charge carriers of 1.2-2 ms was used. It was found that when the reverse bias voltage increases, the maximum of the spectral characteristic shifts to longer wavelengths. This is caused by the expansion of the space charge region (SCR) with an increase in the bias voltage and, accordingly, an increase in the collection coefficient of charge carriers. When studying the spectral characteristic of samples with different resistivity, it was noticed that when the resistivity increases, the maximum of the spectral characteristic can be reached at a lower bias voltage. Because with a higher resistivity, the area of the SCR expands over the entire thickness of the substrate at a lower voltage. When expanding the space charge region to the maximum value, the responsivity level of the PD also reaches saturation. Accordingly, it makes no sense to use a bias voltage of the photodiode higher than the one at which the width of the SCR reaches the reverse side of the crystal. It is also seen that when the life time of minor charge carriers and silicon resistivity increases at the same bias voltage, the maximum of the spectral characteristic shifts to longer wavelengths. The maximum value of the spectral characteristic of 1.01-1.02 μm was reached. It was not possible to achieve a further shift, since the shape of the spectral characteristic of the sensitivity of photodetectors is primarily determined by the dependence of the collection coefficient of charge carrier on the wavelength, the maximum of which under normal conditions is at a wavelength of 0.8-0.9 μm. It is possible to achieve the maximum collection coefficient of charge carriers by optimizing the concentration of impurity in the p+- and n+- regions of the crystal, which allows minimizing the absorption of radiation in these regions. When using mesa technology, which minimizes the degradation of the resistivity of the material, no further shift of the maximum occurs, but the absolute value of responsivity increases compared to planar technology. For a wavelength of 1064 μm, a value of pulse responsivity of 0.5-0.53 A/W and 0.46-0.48 A/W was achieved for mesa- and planar PD, respectively (with a specific resistance of 20-21 kΩ), which is about 60% of the maximum value. It was also seen that a change in the depth of the PD diffusion layers can negatively affect the noise level. It was found that at a depth of n+-p-junction of 4.25 μm, the level of responsivity, at wavelengths below the maximum of the spectral characteristic, is the lowest, accordingly, the influence of background radiation noise on the level of the useful signal at this depth of p-n-junction is minimal.

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Section: Iunclassified

Analysis of the Spectral Characteristics of the Responsivity of Diffusion p-i-n Photodiode Based on High Resistivity p-Si

Kukurudziak¹

2023

Microsyst., Electron. & Acoust.

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“…where the "-" sign means that the deformation is compression;  is the compression coefficient associated with the solubility of the impurity in the lattice, defined as a change in the silicon lattice constant by 1 % of the introduced impurity; NA is the impurity concentration. Silicon ingots usually have a spread in resistivity ∆ρ at different ends [10]. Often this spread reaches 7-8 kОhm•cm, in the best case -∆ρ  1-2 kОhm•cm.…”

Section: Influence Of the Substrate Materials On The Formation Of Dis...mentioning

confidence: 99%

Formation of Dislocations During Phosphorus Doping in the Technology of Silicon p-i-n Photodiodes and their Influence on Dark Currents

Kukurudziak¹

2022

J. Nano- Electron. Phys.

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In the manufacture of p-type silicon-based p-i-n photodiodes (PDs), it was found that when the time of phosphorus diffusion increases, the yield of fit products significantly decreases. Up to 10 % are the rejects as to external appearance, the rest -as to the spread of dark current levels of PD responsive elements (REs), since the double spread of dark currents is considered a defect. Probably, the above occurrence might be caused by non-uniform distribution of defects across REs because of the increase in phosphorus impurity. An additional investigation was required to find out the cause of non-uniform distribution of dark currents and to establish the optimal concentration of impurities, which would provide for a low dark current with minimum spread. To study the effect of the surface resistance of the n + -layer on the concentration of dislocations and their distribution, PDs were made with different duration of the predeposition, accordingly, with different values of the surface resistance. To reveal the nature of the distribution of dark currents on REs, defective crystals were studied using selective etching. It was established that conditions for the occurrence of structural defects within one ingot may be different due to the spread of specific resistance. The dependence of the dislocation density on the surface resistance after phosphorus diffusion was studied. It was noted that REs of a high level of dark currents were characterized by an increased concentration of dislocations as compared to the characteristic density for good crystals at a given surface resistance. The actual reasons for the dislocations distribution non-uniformity are the irregular distribution of point defects generated during oxidation and the presence of microdefects formed during mechanical or chemical-dynamic polishing. When locally increased numbers of growth defects and point defects acquired during the mechanical, chemical or thermal operations are superimposed, critical faults and spread of dark currents with maximum values are observed.

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“…Control of dark currents Id was performed at Ubias = 120 V. Next, the current density Jd in nA/cm 2 will be indicated, which is calculated by formula (1).…”

Section: Experiments Detailsmentioning

confidence: 99%

“…In modern production PD are made by diffusionplanar technology [1], diffusion being the determining operation. It is the diffusion on the surface of silicon wafers that forms responsive elements (RE).…”

Section: Introductionmentioning

confidence: 99%

“…М. С. Кукурудзяк 1,2 Вплив поверхневого опору n + -шару кремнієвих p-i-n фотодіодів на їх електричні параметри 1 Акціонерне товариство «Центральне конструкторське бюро Ритм»Україна, Чернівці, mykola.kukurudzyak@gmail.com 2 Чернівецький національний університет імені Юрія Федьковича, Чернівці, Україна Виготовлено кремнієві квадрантні p-i-n фотодіоди з різною концентрацією дифундованого фосфору в n +шарі. Отримано експериментальну криву розподілу домішки фосфору по глибині дифузійного шару Вивчено вплив концентрації носіїв заряду в даному шарі на темнові струми фоточутливих елементів та охоронного кільця.…”

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Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters

Kukurudziak

2022

Phys. Chem. Solid St.

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Silicon quadrant p-i-n photodiodes of different concentrations of diffused phosphorus in the n+- layer were fabricated. The experimental curve of phosphorus impurity distribution along the depth of the diffusion layer is obtained. The influence of charge carrier concentration in this layer on the dark currents of responsive elements and the guard ring was studied. Volt-ampere characteristics of photodiodes were measured. It was seen that when the surface resistance of the n+-layer decreases, the dark currents decrease, the samples with a surface resistance of 1,9 – 2,4 Ohm / □ have approximately the same level of dark currents of responsive areas, i.e. further increase in charge carrier concentration makes no change. As to dark currents of photodiode guard rings, it was found that for the most part they depend on the state of the crystal periphery but not on the level of doping. The influence of the surface resistance of the n+-layer on interconnection resistance between the responsive areas and the protective ring, and no influence on the capacitance of the photodiodes were revealed.

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High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

Cited by 5 publications

References 1 publication

Analysis of the Spectral Characteristics of the Responsivity of Diffusion <i>p-i-n</i> Photodiode Based on High Resistivity <p>p</p>-Si

Analysis of the Spectral Characteristics of the Responsivity of Diffusion <i>p-i-n</i> Photodiode Based on High Resistivity <p>p</p>-Si

Formation of Dislocations During Phosphorus Doping in the Technology of Silicon p-i-n Photodiodes and their Influence on Dark Currents

Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters

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