High-resistivity SiGe BiCMOS for switch+LNA integration for WiFi front-end IC applications

Alvin, Joshua; Ananth, S.; Shrinivas, P.; Mike, Z.; Vibhor, J.; Chaojiang, L.; James, Alex Pappachen

doi:10.1109/icsict.2016.7998838

Cited by 3 publications

(1 citation statement)

References 4 publications

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“…This was attributed to the annealing effect in the device. as the X-ray irradiation time increased, which compensated for some performance loss, and the degree of recovery over a period may vary depending on the temperature and the irradiation time [39][40][41][42][43]. Table 1 summaries the TID-induced changes in performance metrics under different total doses.…”

Section: Performance Degradation and Small-signal Modelingmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers (LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT), sample LNAs were prepared using silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) as core elements. The LNA was based on a cascode stage with emitter degeneration for narrowband applications. By using a simplified small-signal model of a SiGe HBT, design equations such as gain, impedance matching, and noise figure (NF) were derived for analyzing TID-induced degradations in the circuit-level performance. To study radiation effects in circuits, the SiGe-RF-LNAs fabricated in a commercial 350 nm SiGe technology were exposed to 10-keV X-rays to a total ionizing dose of up to 3 Mrad(SiO2). The TID-induced performance changes of the LNA were modeled by applying degradation to device parameters. In the modeling process, new parameter values after irradiation were estimated based on information in the literature, without direct measurements of SiGe HBTs used in the LNA chip. As a result, the relative contributions of parameters on the circuit metrics were compared, identifying dominant parameters for degradation modeling. For the TID effects on input matching (S11) and NF, the base resistance (RB) and the base-to-emitter capacitance (Cπ) of the input transistor were mostly responsible, whereas the transconductances (gm) played a key role in the output matching (S22) and gain (S21). To validate the proposed approach, it has been applied to a different LNA in the literature and the modeling results predicted the TID-induced degradations within reasonable ranges.

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Section: Performance Degradation and Small-signal Modelingmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS

Joseph

Jain

Ong

et al. 2018

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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85 fs R_ON×C_OFFand CP_1dB@28GHz> 25dBm Innovative PIN Diode Integrated in 55 nm BiCMOS Technology Targeting mmW 5G and 6G Front End Module

Foissey

Gianesello

Gidel

et al. 2021

2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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High-resistivity SiGe BiCMOS for switch+LNA integration for WiFi front-end IC applications

Cited by 3 publications

References 4 publications

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS

85 fs R_ON×C_OFFand CP_1dB@28GHz> 25dBm Innovative PIN Diode Integrated in 55 nm BiCMOS Technology Targeting mmW 5G and 6G Front End Module

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High-resistivity SiGe BiCMOS for switch+LNA integration for WiFi front-end IC applications

Cited by 3 publications

References 4 publications

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS

85 fs RON×COFFand CP1dB@28GHz> 25dBm Innovative PIN Diode Integrated in 55 nm BiCMOS Technology Targeting mmW 5G and 6G Front End Module

Contact Info

Product

Resources

About

85 fs R_ON×C_OFFand CP_1dB@28GHz> 25dBm Innovative PIN Diode Integrated in 55 nm BiCMOS Technology Targeting mmW 5G and 6G Front End Module