High-Resolution AlGaN/GaN HEMT-Based Electrochemical Sensor for Biomedical Applications

Sharma, Niketa; Chaturvedi, Nidhi; Mishra, Saroj Kumar; Singh, Kuldip; Chaturvedi, Nitin Dutt; Chauhan, Ashok; Periasamy, C.; Kharbanda, D. K.; Parjapat, Priyavart; Khanna, P. K.

doi:10.1109/ted.2019.2949821

Cited by 37 publications

(19 citation statements)

References 33 publications

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“…The maximum and minimum drain current sensitivity that have been achieved in the proposed work are 132mA/mm-pH and 11.3mA/mm-pH respectively. The maximum threshold voltage sensitivity is 950mV/pH which is the highest reported sensitivity as compared to previously reported work [10], [40]- [42]. The reasons for achieving high threshold sensitivity beyond Nernstian limit are hydrophilic nature of bare AlGaN surface, optimum W/L ratio and use of high biasing conditions.…”

Section: Sensitivitymentioning

confidence: 59%

“…Various FET based biosensors [5]- [9] for detection of glucose [10], Lactic acid [11], [12], uric acid [1], [13], [14] and protein have been developed which are being used for monitoring food quality, environment management and biomedical applications [15]. Sensors based on MOSFET device have also been reported for detection of various other biomolecule species such as anthrax [4], glucose [5] and c-reactive protein [6].…”

Section: Introductionmentioning

confidence: 99%

“…But in the last few years, HEMTs have also been continuously explored for developing high quality sensors in the medical as well as industrial areas due to high stability and their capability to easily bind with polar liquids. Under high temperature, harsh environment and alkali or acidic solution conditions, AlGaN/GaN HEMT exhibit superior performance as sensor [7]- [10]. The primary advantage of AlGaN/GaN HEMT sensors is that they exhibit high change in output current and offer lower theoretical detection limits.…”

Section: Introductionmentioning

confidence: 99%

“…Recently Sharma et al [10] have developed an AlGaN/GAN HEMT based pH sensor which shows high sensitivity of 4.32 μA/mm-pH. AlGaN/GaN due to its material properties and transport phenomena also suffers from Nernstian limit.…”

Section: Introductionmentioning

confidence: 99%

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Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

2021

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This paper presents an analytical model of AlGaN/GaN MOS-HEMT based pH sensor for the first time to determine pH of different electrolyte solutions. Gouy-chapman stern model has been used to calculate the surface charge density. The results obtained using analytical model have been verified and show good agreement with the simulated results. Cavity length, thickness of AlGaN barrier layer and Al composition have been optimized to improve the sensitivity of the device. It has been observed that the drain current and threshold voltage decreases with increase in pH of the electrolytic solutions. Proposed AlGaN/GaN MOS-HEMT sensor demonstrate a quick response to the pH changes. The maximum drain-on-sensitivity of the device is 132mA/mm-pH. Surface potential and threshold voltage sensitivity of 0.95mV/pH and 950mV/pH respectively have been obtained which is much higher than the Nernstian limit(59.2mV/pH).

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Section: Sensitivitymentioning

confidence: 59%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

2021

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“…31 In our previous studies, we developed HEMTs for various sensing and biosensing applications such as heavy metal, pH, polar liquid, C-erbB2/ HER2, and C3G detection. [32][33][34][35][36][37] The previously developed biosensor shows a reasonably good response for C-erbB2 (HER2) detection; however, it lacks robust surface biochemistry that limits the low-level detection of the targeted biomolecules. Also, it was demonstrated in human breast cancer cell lines that biopsy of the cell tissues from the affected area is required, making the testing invasive, challenging and less frequent.…”

Section: Introductionmentioning

confidence: 99%

High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

et al. 2022

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A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

Sinha

Pal

2021

Electrochemical Science Adv

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The demand for miniaturized point‐of‐care chemical/biochemical sensors has driven the development of field‐effect transistors (FETs) based pH sensors over the last 50 years. This paper aims to review the fabrication technologies, device structures, sensing film materials, and modeling techniques utilized for FET‐based pH sensors. We present the governing principles of potentiometric sensors, with major focus on the working principles of ion‐sensitive FETs (ISFETs). We extensively review different sensing film materials deposited by various techniques, which is critical to the sensing performance of ISFETs. The popular fabrication technologies have been presented, with special emphasis on state‐of‐the‐art silicon‐on‐insulator based technology, which can achieve high sensitivity by utilizing the dual‐gate effect. Furthermore, recent advancements in nano‐ISFETs has been elucidated. We also discuss the adoption of unmodified complementary metal‐oxide semiconductor (CMOS) ISFETs using standard CMOS processes, which has enabled the fabrication of integrated ISFET arrays, which are especially suited for ion‐imaging applications. Moreover, recent developments in extended‐gate FETs has been discussed, which have gained lot of attention due to their design flexibility and ease of fabrication, which is desirable for wearable sensing applications. In addition, recently there have been efforts to utilize nonsilicon channel materials for pH‐sensing application to obtain superior performance and various channel materials have been reviewed. Finally, we have extensively reviewed the ISFET device modeling and simulation techniques using various computer‐aided design tools, which aid in sensor design and characterization.

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High-Resolution AlGaN/GaN HEMT-Based Electrochemical Sensor for Biomedical Applications

Cited by 37 publications

References 33 publications

Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

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