2003
DOI: 10.1143/jjap.42.769
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High-Resolution Blue-Laser Mastering Using an Inorganic Photoresist

Abstract: An inexpensive and practical mastering technology was developed using a blue-laser optical system with a wavelength of 405 nm and numerical aperture (NA) of 0.95 comprising an inorganic photoresist. The resist system showed a higher resolution for a successful 130 nm pit patterning than that obtained by an ordinary organic photoresist system. Based on this technology, a read only memory (ROM) disc with a recording capacity of 25.2 GB on a 120-mm-diameter surface was mastered at a high recording speed of 4.92 m… Show more

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Cited by 44 publications
(20 citation statements)
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“…As a result, the precision of the shape and size for small-size data pits becomes difficult due to their intrinsic accumulation effects of the light absorption on the photoresists. In order to overcome these difficulties, recently a new laser thermal lithography (LTL) technology was proposed and demonstrated, which uses inorganic materials as resist and a laser beam as a heat source [78][79][80][81][82][83][84][85][86][87]. The technology is based on the fact that the etch rates for irradiated and unirradiated areas are different.…”
Section: Laser Thermal Lithography (Ltl)mentioning
confidence: 99%
“…As a result, the precision of the shape and size for small-size data pits becomes difficult due to their intrinsic accumulation effects of the light absorption on the photoresists. In order to overcome these difficulties, recently a new laser thermal lithography (LTL) technology was proposed and demonstrated, which uses inorganic materials as resist and a laser beam as a heat source [78][79][80][81][82][83][84][85][86][87]. The technology is based on the fact that the etch rates for irradiated and unirradiated areas are different.…”
Section: Laser Thermal Lithography (Ltl)mentioning
confidence: 99%
“…As a new technology for fabricating micro/nano pattern structures, laser thermal lithography has attracted much attention in recent years owing to its advantages: (I) based on a thermal mode, laser thermal lithography is not limited by any diffraction limit and can yield a super-resolution [5,6], (II) the facilities required are relatively simple and the cost is relatively low [7][8][9], (III) the photo resists used in phase change lithography are inorganic phase change materials, which have a building block whose size of less than 1 nm ultimately limits their resolution. By comparison, typical polymer resists have a molecular weight of 5-20 Â 10 3 units, giving a molecular pixel size of 4-9 nm [10].…”
Section: Introductionmentioning
confidence: 99%
“…Compared with organic resist materials, inorganic resist materials generally exhibit a high resolution and a clear, regular, and steep edge profile at the boundary after etching due to their light molecular weight and narrow temperature change transition region [7,8]. In recent years, several inorganic resist materials, which include phase-change films, such as Ge-Sb-Te, Te-O, ZnS-SiO 2 or Ge-Sb-Sn-O, and metal oxide films, such as W-O or Mo-O, have been developed [2,3,[9][10][11].…”
Section: Introductionmentioning
confidence: 99%