High-Resolution Junction Photo-Voltage Mapping of Sheet Resistance and Leakage Current Variations with ms-Timescale Annealing Methods

Abstract

A non-contact method for measurement of sheet resistance and leakage current (RsL) for ultra-shallow junction characterization is described where high-density (30,000 pixel) sheet resistance maps provide detailed evaluation of local and global variations of dopant activation arising from implant and anneal conditions. Various examples of RTP-spike, flash and laser anneals and new low-dose implant results are discussed.