New metrologies for annealing of USJs and thin films

Current, Michael; Borland, John

doi:10.1109/rtp.2008.4690537

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors 2008

DOI: 10.1109/rtp.2008.4690537

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New metrologies for annealing of USJs and thin films

Michael Current

John Borland²

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2010

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Cited by 2 publications

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Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Petersen

Hansen

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe ͑M4PP͒ has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.

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Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Petersen

Hansen

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

Study of submelt laser induced junction nonuniformities using Therma-Probe

Rosseel

Bogdanowicz

Clarysse

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Submelt laser annealing is a promising technique to achieve the required sheet resistance and junction depth specifications for the 32 nm technology node and beyond. In order to obtain a production worthy process, it is important to minimize possible nonuniformities caused by the annealing process both at macroscopic and microscopic levels. In this work, the authors present high resolution Therma-Probe® measurements to assess the junction nonuniformity on 0.5 keV boron junctions and zoom in on the effect of temperature variations and multiple subsequent laser scans. The results are compared to standard and micro-four-point probe sheet resistance data, secondary ion mass spectrometry, and Hall measurements obtained during earlier studies. Besides the impact of the nonuniformities on the “conventional” thermal wave signal, they found a strong correlation to the dc reflectance of the probe laser (λ = 675 nm). The dc probe reflectance is dominated by free carriers and is highly correlated to the sheet resistance both on blanket wafers and on real device wafers.

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New metrologies for annealing of USJs and thin films

Cited by 2 publications

References 26 publications

Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Study of submelt laser induced junction nonuniformities using Therma-Probe

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