High-Resolution Light-Emitting Diode Array Based on an Ordered ZnO Nanowire/SiGe Heterojunction

Liang, Renrong; Zhang, Taiping; Wang, Jing; Xu, Jun

doi:10.1109/tnano.2016.2553120

Cited by 5 publications

(2 citation statements)

References 36 publications

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“…The ε-Si/GeSi/C-Si materials were prepared through reduced pressure chemical vapor epitaxy (CVE) [24]. SiH 2 Cl 2 was used as the Si precursor, GeCl 4 was the Ge precursor, and H 2 was the carrier gas.…”

Section: Methodsmentioning

confidence: 99%

Experimental Analyses on Multiscale Structural and Mechanical Properties of ε-Si/GeSi/C-Si Materials

Qiu

Wang

et al. 2018

Applied Sciences

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Strained silicon (ε-Si) is a promising material that could extend Moore's law by enhancing electron mobility. A ε-Si material is usually composed of multiscale, multilayer heterostructures, where the strained-silicon film or strap is tens-of-nanometers thick, and its buffer layers are of the micrometer scale. The structural properties determine the electrical performance and reliability of ε-Si-based devices. Inhomogeneous residual stress is induced during the preparation, which induces ε-Si structure failure. In this work, biaxial strained-silicon films that contain graded and relaxed germanium-silicon buffer layers were prepared on monocrystalline silicon wafers through reduced-pressure chemical-vapor epitaxy. The layer components and thicknesses were measured using energy-dispersive spectroscopy and scanning-electron microscopy. Crystal and lattice characters were observed by using high-resolution transmission-electron microscopy and micro-Raman spectroscopy. The residual stress distribution along cross-sections of the ε-Si multilayer structures was examined by using micro-Raman mapping. The experimental results showed that, with a gradual increase in germanium concentration, the increasing residual stress was suppressed owing to dislocation networks and dislocation loops inside the buffer layers, which favored the practical application. may yield a material/structure that meets the design requirements of geometrical dimensions and structural-mechanical properties [7,8]. Furthermore, the design, manufacture, performance evaluation and control technologies for microelectronics with non-uniform and local-singular stress distribution is regarded as the future of the microelectronics industry [9].The (equal biaxial or uniaxial) strain state and its magnitude determine the optical/electrical properties of ε-Si-based devices [10]. The strain state and magnitude of the ε-Si depend heavily on the buffer-layer properties (such as the element composition, thickness, lattice quality, defects and residual stress) and interfacial properties (such as mismatch and shear stress) [11]. Size miniaturization of a ε-Si-based device leads to increased defect densities and residual stress, which results in a degraded optoelectronic performance and structure reliability of the entire integrated device [12].Experimental studies of multilayer heterogeneous structures, such as strained-silicon, face two major challenges, namely, "multiscale" and "multiproperty coupling". A strained-silicon layer is usually several to tens-of-nanometers thick, whereas the buffer-layer thickness tends to be of the micrometer scale, and the substrate is typically several hundreds of microns thick. Unique key physical and mechanical behaviors that interact exist at each spatial scale. Cross-scale interactions between the multiscale physical-mechanical properties increase the complexity of experimental studies of strain silicon.A number of methods at different spatial scales have been applied to experimental studies on multilayer heterogeneous structures [1...

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Section: Methodsmentioning

confidence: 99%

Experimental Analyses on Multiscale Structural and Mechanical Properties of ε-Si/GeSi/C-Si Materials

Qiu

Wang

et al. 2018

Applied Sciences

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“…Light emission of a ZnO/TAZ heterostructure piezo-OLED is also enhanced by the piezo-phototronic effect and used for pressure sensors [ 235 ]. Furthermore, performances of white LED based on CsPbBr 3-x I x (x = 0–3)/ZnO heterojunctions on a flexible platform and a high-resolution infrared LED array based on an ordered ZnO NW/SiGe heterojunction could also be improved by introducing strains [ 236 , 237 ]. The strain-modulation results of the piezo-phototronic effect and device structure of a ITO/ZnO/CsPbBr 3 /Spiro-OMeTAD/Al heterojunction are shown in Figure 8 d,e.…”

Section: Piezo-phototronics Based On Zno Nanowiresmentioning

confidence: 99%

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

et al. 2022

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The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human–machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal–semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms’ analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.

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Investigations on the microwave-assisted growth of ZnO nanorods and the performance of nanostructured heterojunction UV photodetector

Nair,

Shyam

et al. 2024

Physica B: Condensed Matter

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High-Resolution Light-Emitting Diode Array Based on an Ordered ZnO Nanowire/SiGe Heterojunction

Cited by 5 publications

References 36 publications

Experimental Analyses on Multiscale Structural and Mechanical Properties of ε-Si/GeSi/C-Si Materials

Experimental Analyses on Multiscale Structural and Mechanical Properties of ε-Si/GeSi/C-Si Materials

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

Investigations on the microwave-assisted growth of ZnO nanorods and the performance of nanostructured heterojunction UV photodetector

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