Hall devices having an active area of about ͑500 nm͒ 2 are fabricated by focused electron-beam-induced deposition. The deposited material consists of cobalt nanoparticles in a carbonaceous matrix. The realized devices have, at room temperature, a current sensitivity of about 1 V / AT, a resistance of a few kilo-ohms, and can be biased with a maximum current of about 1 mA. The room-temperature magnetic field resolution is about 10 T/Hz 1/2 at frequencies above 1 kHz. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.1856134͔Magnetic sensors having submicrometer spatial resolution are key elements in several fundamental studies as well as industrial applications.1-4 Hall effect devices are emerging as one of the most suitable solutions. [4][5][6][7][8][9] The ordinary Hall effect is due to the Lorentz force acting on charge carriers in metals, semi-metals, and semiconductors.5 Magnetic materials show additional "Hall phenomena" which are, generally speaking, generated by spin-orbit interactions: the so-called extraordinary [10][11][12][13][14][15][16] and planar Hall effects.
17-20The local deposition of materials using a focused electron beam in the presence of a volatile precursor is a wellestablished technique for the maskless fabrication of submicrometer structures such as functionalized tips for scanning probe microscopy, 21-26 electrodes for local conductivity measurements, 27 solder bonds for carbon nanotubes studies, 28 nanowires, 29-33 and nanodots. 34 In this letter we demonstrate the possibility to grow highly sensitive cobaltcarbon submicrometer Hall devices by means of a focused electron beam. This flexible "single-step" process represents an alternative to the conventional "multisteps" methods, which are usually based on a combination of optical ͑or electron beam͒ lithography and focused ion beam milling. The realized devices show a strong extraordinary Hall effect, whereas the ordinary and planar Hall effects ͑in most of the devices͒ are relatively small.