High resolution optical lithography or high throughput electron beam lithography: The technical struggle from the micro to the nano-fabrication evolution

Okazaki, Shinji

doi:10.1016/j.mee.2014.11.015

Cited by 80 publications

(34 citation statements)

References 92 publications

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“…Therefore, top-down lithography is suitable to fabricate exquisite, mass-producible patterns without significant defects over large areas. Among the top-down lithography methods, ≈10 nm scale patterns can be produced by extreme ultraviolet (EUV) lithography, [16][17][18][19][20][21][22][23][24][25][26] charged particle-based lithography, [27][28][29][30][31][32][33][34][35][36][37][38][39][40][41] tip-based lithography, [42][43][44][45][46][47][48][49][50][51][52][53][54][55] and nanoimprint lithography. [56][57][58][59][60][61][62][63][64]…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in Simple and Cost‐Effective Top‐Down Lithography for ≈10 nm Scale Nanopatterns: From Edge Lithography to Secondary Sputtering Lithography

et al. 2020

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The development of a simple and cost‐effective method for fabricating ≈10 nm scale nanopatterns over large areas is an important issue, owing to the performance enhancement such patterning brings to various applications including sensors, semiconductors, and flexible transparent electrodes. Although nanoimprinting, extreme ultraviolet, electron beams, and scanning probe litho‐graphy are candidates for developing such nanopatterns, they are limited to complicated procedures with low throughput and high startup cost, which are difficult to use in various academic and industry fields. Recently, several easy and cost‐effective lithographic approaches have been reported to produce ≈10 nm scale patterns without defects over large areas. This includes a method of reducing the size using the narrow edge of a pattern, which has been attracting attention for the past several decades. More recently, secondary sputtering lithography using an ion‐bombardment technique was reported as a new method to create high‐resolution and high‐aspect‐ratio structures. Recent progress in simple and cost‐effective top‐down lithography for ≈10 nm scale nanopatterns via edge and secondary sputtering techniques is reviewed. The principles, technical advances, and applications are demonstrated. Finally, the future direction of edge and secondary sputtering lithography research toward issues to be resolved to broaden applications is discussed.

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Section: Introductionmentioning

confidence: 99%

Recent Progress in Simple and Cost‐Effective Top‐Down Lithography for ≈10 nm Scale Nanopatterns: From Edge Lithography to Secondary Sputtering Lithography

et al. 2020

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“…Although this impressive technology development has been mainly achieved by adopting reduced wavelength of the imaging radiation, in the last two decades additional technology breakthroughs such as immersion and double exposure patterning allowed the shrinkage of device dimensions, while keeping the wavelength at 193 nm [ 4 ]. In addition, options like directed self-assembly [ 5 , 6 , 7 , 8 ], e-beam lithography [ 9 , 10 , 11 , 12 ], maskless techniques [ 13 , 14 ], and nanoimprint technology [ 15 , 16 ] have been heavily explored. At this period, it seems that the implementation of exposure at reduced wavelength, and in particular at 13.5 nm, is the choice of the big semiconductor industries for the future device technology.…”

Section: Introduction—nanostructure Formation In Semiconductor Litmentioning

confidence: 99%

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

2020

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The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on this direction has triggered a dramatic increase of interest on resist materials of high sensitivity especially designed for use in the EUV spectral region in order to meet the strict requirements needed for overcoming the source brightness issues and securing the cost efficiency of the technology. To this direction both fundamental studies on the radiation induced chemistry in this spectral area and a plethora of new ideas targeting at the design of new highly sensitive and top performing resists have been proposed. Besides the traditional areas of acid-catalyzed chemically amplified resists and the resists based on polymer backbone breaking new unconventional ideas have been proposed based on the insertion of metal compounds or compounds of other highly absorbing at EUV atoms in the resist formulations. These last developments are reviewed here. Since the effort targets to a new understanding of electron-induced chemical reactions that dominate the resist performance in this region these last developments may lead to unprecedented changes in lithographic technology but can also strongly affect other scientific areas where electron-induced chemistry plays a critical role.

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“… 32 Compared to chemical synthesis, physical preparation is more promising for LSPR sensors because of the controllable interspace of nanostructures and non-contamination of the metal surface. In physical preparations, e-beam lithography, 33 focused ion beam lithography, 34 and photolithography 35 can realize the precise control of size, shape, and interspace among the metal nanostructures, but they still can not provide low-cost production of large-area nanostructures. Nanosphere lithography, 36 , 37 template stripping, 38 elastic soft lithography (ESL) 39 are the next-generation approaches that provide cheap production of large-area nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Reproducible Plasmonic Nanopyramid Array of Various Metals for Highly Sensitive Refractometric and Surface-Enhanced Raman Biosensing

Zhang

Wang

et al. 2018

ACS Omega

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Localized surface plasmon resonance (LSPR) biosensors show great potential for practical/commercial use in clinical diagnosis, home healthcare, environmental analysis, and public healthcare. However, two main issues, that is, low refractometric sensitivity and low reproducibility (large-area uniformity and batch-to-batch consistency), hinder the extensive applications of LSPR biosensors. Therefore, plasmonic nanostructures with high sensitivity and excellent reproducibility are desirable for preparing reliable LSPR sensors. Herein, we have fabricated plasmonic nanopyramid arrays (NPAs) for several batches with reproducible morphology and optical properties by elastic soft lithography and metal thermal evaporation. NPAs of various metals (i.e., Al, Au, and Ag) were also prepared by thermal evaporation with the according metals. The transmission spectra of these NPAs showed several narrow LSPR peaks in the visible-infrared wavelength region. The refractometric sensitivities of the LSPR peaks were systematically studied, and high refractometric sensitivities of 774.0, 472.8, and 421.0 nm/RIU were achieved on Al, Au, and Ag NPAs, respectively. To demonstrate the potential of the NPAs for multiplex applications, we first applied this highly sensitive Al NPA biosensor to monitoring the process of proliferation of HeLa cancer cells, in situ and in real time. Then, we demonstrated that the Au NPA was able to identify the absorbed analytes on its surface through the surface-enhanced Raman scattering spectrum. In addition, the finite difference time domain simulations were performed to reveal the electromagnetic field enhancement on NPAs. Because of the properties of high sensitivity and excellent reproducibility of the metal NPA LSPR substrates, as well as the simplicity and cost efficiency of the fabrication method, our proposed work will accelerate the practical use of LSPR sensors.

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High resolution optical lithography or high throughput electron beam lithography: The technical struggle from the micro to the nano-fabrication evolution

Cited by 80 publications

References 92 publications

Recent Progress in Simple and Cost‐Effective Top‐Down Lithography for ≈10 nm Scale Nanopatterns: From Edge Lithography to Secondary Sputtering Lithography

Recent Progress in Simple and Cost‐Effective Top‐Down Lithography for ≈10 nm Scale Nanopatterns: From Edge Lithography to Secondary Sputtering Lithography

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

Reproducible Plasmonic Nanopyramid Array of Various Metals for Highly Sensitive Refractometric and Surface-Enhanced Raman Biosensing

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