High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

Abstract

dopants. Here we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I 10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radioisotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I 10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I 10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Snrelated donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn Zn double donor compensated by an unknown single acceptor.

Charge states and lattice sites of dilute implanted Sn in ZnO

“…Sn has been proposed as an efficient n-type dopant in ZnO, due to the observed decrease in the electrical resistivity with increasing Sn concentration [9,10]. This has been attributed to the presence of Sn 4+ substituting the Zn 2+ , which results in two extra free electrons [9,[11][12][13][14]. A similar decrease in the resistivity was also observed by doping ZnO with Cd but this has been interpreted differently.…”

High-Quality ZnO Layers Grown by CVD on Sapphire Substrates with an AlN Nucleation Layer

“…Research on zinc oxide has a long history reaching back almost a century . However, there is still ongoing research, for example, on optical properties and on defects . ZnO shows excellent characteristics for sensing applications , and surface acoustic wave (SAW) devices .…”

ENHANCED PHOTOCATALYTIC PROPERTIES OF Sn-DOPED ZnO NANOPARTICLES BY FLAME SPRAY PYROLYSIS UNDER UV LIGHT IRRADIATION

“…In many photocatalytic reactions, ZnO has been reported to have high photocatalytic activity in the degradation of various organic contaminants in both acidic and basic media. The greatest advantage of ZnO is the absorption of more light quanta than other semiconductors by absorbing a larger portion of the UV spectrum [Postica et al, 2017, Kumar et al, 2016and Ismail et al, 2016. The suppression of recombination of photon-electron-hole pairs in semiconductors is necessary to increase the photocatalytic activity.…”