High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor

Chaudhuri, Sandeep K.; Karadavut, OmerFaruk; Kleppinger, Joshua W.; Mandal, Krishna C.

doi:10.1063/5.0059151

Cited by 21 publications

(11 citation statements)

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“…3(a) with L d as a free parameter. The best fit yielded L d = 56 μm, which is almost three times of that obtained in highest resolution SBDs [20], [29], [30]. The CCE obtained at V a = 0 V was found to be 82% which is also very high compared to the 57% obtained for the high-resolution SBDs fabricated in our laboratory and others [20], [31], [32].…”

Section: Resultsmentioning

confidence: 47%

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Chaudhuri

Karadavut

Kleppinger

et al. 2022

IEEE Electron Device Lett.

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We report the fabrication of novel self-biased high resolution radiation detectors achieved in n-type 4H-SiC metal-oxide-semiconductor (MOS) devices. Vertical MOS structure has been realized by pulsed laser deposition of 40 nm Y 2 O 3 layer on 20 μm n-type 4H-SiC epilayer followed by sputter coating a nickel gate, which revealed a record-high hole diffusion length. The MOS device exhibited a remarkable radiation detection response to 5486 keV alpha particles with a charge collection efficiency of 82% and an energy resolution of 72 keV full width at half maximum (FWHM) at zero applied bias. The hole diffusion length has been calculated to be 56 μm using a drift-diffusion model. Such long hole diffusion length and a flat-band potential of 2.1 V, enabled to attain high efficiency and resolution in the self-biased mode. Band energy calculations indicated that the presence of Y 2 O 3 layer may have neutralized the hole traps usually present in a metal-4H-SiC interface thereby substantially improving the hole transport. Such high performing self-biased radiation detectors fabricated on 4H-SiC are intended for applications in harsh environment space missions, wherein carrying detector power supplies as a payload becomes a critical logistic issue. The present study opens the high potential of other wide bandgap semiconductors as self-biased MOS devices as well. Index Terms-Epitaxial layers, pulsed laser deposition, MOS devices, radiation detectors, silicon carbide (4H-SiC), yttrium oxide (Y 2 O 3 ). I. INTRODUCTION4 H-SILICON CARBIDE has unique combination of physical properties such as excellent carrier transport properties, high breakdown voltage, high displacement threshold,

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Section: Resultsmentioning

confidence: 47%

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Chaudhuri

Karadavut

Kleppinger

et al. 2022

IEEE Electron Device Lett.

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Section: Polytype Sicmentioning

confidence: 99%

“…A wide interest in using 4H-SiC for radiation detection applications has been driving the development of semiconductor devices, such as 4H-SiC PiN diodes [13] or Metal-Oxide-Semiconductor (MOS) devices [14]. However, such devices will not be included ide-Semiconductor (MOS) devices [14]. However, such devices will not be include review, as we will strictly focus on SBDs as one of the simplest and most wid radiation detectors.…”

Section: Polytype Sicmentioning

confidence: 99%

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Capan

2022

Electronics

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In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) structures, as significant progress has been achieved in radiation detection applications of SBDs in the last decade. Here, we present the recent advances at all key stages in the application of 4H-SiC SBDs as radiation detectors, namely: SBDs fabrication, electrical characterization of SBDs, and their radiation response. The main achievements are highlighted, and the main challenges are discussed.

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“…The above-mentioned dependance of charge carrier transport on applied bias in junction-based detectors can be modeled using a drift-diffusion theory given by Eq. 3 below [29] [31] [32]. The variation of the experimentally determined CCE as a function of gate bias has been fitted with Eq.…”

Section: Radiation Detectionmentioning

confidence: 99%

Investigation of Ni/Y2O3/n-4H-SiC metal-oxide-semiconductor structure for high-resolution radiation detection

Karadavut

Nag

Kleppinger

et al. 2022

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIV

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Ni/Y2O3/4H-SiC metal-oxide-semiconductor (MOS) structure has been realized on 20 μm thick 4H-SiC epitaxial layers by depositing 40 nm thick Y2O3 layers through pulsed laser deposition and using nickel as the gate contact. 4H-SiC based MOS structures with thin oxide layers are being considered as novel detector structures for ionizing radiation. Y2O3 being a wide bandgap (5.5 eV) and high-𝑘 dielectric (𝑘 = 14-16) is beneficial to lower the junction leakage current and increasing the bias voltage limit. The current-voltage (I-V) characteristics recorded for the fabricated MOS devices revealed excellent rectification properties and a very low leakage current density of 80 pA/cm 2 at a gate bias of -500 V. The Mott-Schottky plot obtained from high frequency (1 MHz) capacitance-voltage (C-V) measurement revealed a linear trend as observed in Ni/4H-SiC Schottky barrier detectors. A built-in potential of 2.0 V has been calculated from the C-V characteristics. The radiation detection properties of the MOS detectors have been assessed through pulse height spectroscopy using a 241 Am alpha particle source. The detectors revealed a well-defined peak in the pulse height spectrum with an energy resolution of 1.6% and a charge collection efficiency (CCE) of 82% at 0 V applied bias (self-biased mode) for the 5486 keV alpha particles. The energy resolution and the charge collection efficiency were seen to improve further with increased gate bias. A CCE of 1.0 and an energy resolution of 0.4% has been observed when the MOS detector was biased at -50 V. A very long hole diffusion length of 56 μm has been calculated using a drift-diffusion model and the variation of experimentally obtained CCE with bias voltage. Such long hole diffusion length and the high built-in potential has led to the highefficiency detection performance in self-biased mode. Capacitance-mode deep level transient spectroscopy revealed the presence of deep level trap centers commonly observed in 4H-SiC epilayers with trap concentrations similar to that has been observed in our previous devices.

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High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor

Cited by 21 publications

References 50 publications

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Investigation of Ni/Y2O3/n-4H-SiC metal-oxide-semiconductor structure for high-resolution radiation detection

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