High resolution scanning tunnelling microscopy and extended x-ray-absorption fine structure study of the (5 × 3) silicide structure on Cu(001)

Abstract

Using low energy electron diffraction (LEED), scanning tunnelling microscopy (STM) andx-ray absorption spectroscopy (XAS) techniques, we have studied the first steps of silicon adsorption onto Cu (001) single crystal substrate. For low coverage (~ 0.5 ML) and after annealing at 100°C, STM images and LEED patterns reveal the formation of an ordered quasi commensurate (5 3) × superstructure. From a quantitative analysis of XAS data, we extract the Si-Cu distance and detail the local atomic arrangement of the (5 3) × structure.