High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon

Bender, Hugo; Vanhellemont, Jan; Schmolke, R.

doi:10.1143/jjap.36.l1217

Cited by 30 publications

(10 citation statements)

References 6 publications

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“…14,16 According to the SIRM results listed in Table II and also shown in Fig. In agreement with their double size, most probably these larger voids are double or multiple voids that have frequently been observed by a.o.…”

supporting

confidence: 72%

On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

Vanhellemont

Zhang

et al. 2010

Journal of Applied Physics

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The assumed impact of Ge doping on void formation during Czochralski-growth of silicon single crystals, is studied using scanning infrared microscopy. It has been reported that Ge doping leads to a reduction in the flow pattern defect density and of the crystal originated particle size, both suggesting an effect of Ge on vacancy concentration and void formation during crystal growth. The present study however reveals only a marginal-if any-effect of Ge doping on grown-in single void size and density. Double and multiple void formation might however be suppressed partially by Ge doping leading to the observed decrease in flow pattern defect density. The limited effect of Ge doping on single void formation is in agreement with earlier findings that Ge atoms are only a weak trap for vacancies at higher temperatures and therefor should have a smaller impact on the vacancy thermal equilibrium concentration and on single void nucleation than, e.g., interstitial oxygen and nitrogen.

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supporting

confidence: 72%

On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

Vanhellemont

Zhang

et al. 2010

Journal of Applied Physics

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“…Such vacancy agglomerations are often found in pairs, with three pits in close proximity not uncommon. 8,9 Once the morphology of the substrate defects was well understood the sensitivity of the defect inspection was tuned to exclude the detection of the COPs. Several UTR films of varying thickness were spin coated on silicon wafers and their defect levels were determined using the tuned inspection ͑Fig.…”

Section: A Intrinsic Defectivity Of Utr Films On Bare Silicon Wafersmentioning

confidence: 99%

Lithography using ultrathin resist films

Pike¹,

Bell²,

Lyons³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…It is believed that these defects are related to the relatively high hydrogen content of the recharged Si granules. With respect to solar application, it is unlikely that these defects have an adverse effect on solar cell performance, as their density is relatively low and recombination of charge carriers at the void surface is strongly suppressed by the as‐grown passivating oxide layer, which is well known for voids in as‐grown CZ crystals . In addition, the capability to produce n‐type crystals with a very thight resistivity distribution may be important for solar cell applications, as, depending on the cell design, the cell efficiency is often a function of the resistivity of the base material.…”

Section: Ccz Technologymentioning

confidence: 99%

FZ and CZ crystal growth: Cost driving factors and new perspectives

Ammon¹

2014

Phys. Status Solidi A

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In the field of monosilicon crystal growth, the Czochralski (CZ) as well as the floating zone (FZ) method have grown to a mature technology over the last 60 years and, until today, the costs have been continuously reduced. The cost driving factors for CZ and FZ are reviewed with respect to further potential improvements. Generally, the cost for the feedstock material is still dominanting the cost of ownership for both methods despite the dramtic decrease of the poly silicon price over the last years. This is particularly true for FZ where notably more than 50% of the production costs are related to the polysilicon feed rods which are much more expensive as compared to the chunk polysilicon as used for CZ. As a consequence, the FZ method is only used for applications where silicon crystals with very low oxygen concentration are required. Due to the strong influence of the feedstock material on cost, the main focus of the development work has been on the increase of crystal yield and the identification of factors impacting the yield. However, for most electronic and, in particular, for solar application, the crystal yield has reached a level where significant improvements cannot be expected anymore. With the potential change from p-to n-type silicon in the solar industry, previously developed techniques, like continuously recharged CZ, which were finally stopped for electronic applications, are reconsidered and will be discussed with respect to their future potential. Special attention will be given to the advantages and disadvantages of the FZ method. It will be shown that most of the current drawbacks of FZ can be remedied by a new technique which avoids the use of expensive polysilicon feed rods and enables the FZ method to grow dislocation free crystals with inexpensive silicon granules.

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High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon

Cited by 30 publications

References 6 publications

On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

Lithography using ultrathin resist films

FZ and CZ crystal growth: Cost driving factors and new perspectives

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