High-resolution TEM characterization of MOVPE-grown (111)-BP layer on hexagonal 6H (0001)-SiC

Udagawa, T.; Odawara, M.; Shimaoka, Goro

doi:10.1016/j.apsusc.2004.10.129

Cited by 5 publications

(6 citation statements)

References 5 publications

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“…However, due to the mismatch of crystal symmetries between BP (threefold symmetry) and 4H-and 6H-SiC (six-fold symmetry), rotational twinning may occur. Previous studies on BP/SiC have reported the existence of stacking faults and rotational twinning [8,9]. Zhang et al [10] reported that use of 4H-SiC(0001) substrates tilted towards the ½1100 direction could eliminate twinning in icosahedral boron arsenide (B 12 As 2 ) epitaxial films.…”

Section: Introductionmentioning

confidence: 98%

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Padavala

Frye

Ding

et al. 2015

Solid State Sciences

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a b s t r a c tEpitaxial growth of boron phosphide (BP) films on 4H-and 6H-SiC(0001) substrates with on-and off-axis orientations was investigated in this study. The films were prepared by chemical vapor deposition using phosphine and diborane as reactants over a temperature range of 1000 o Ce1200 C. The effects of growth parameters such as temperature, reactant flow rates, substrate type, and crystallographic orientation on BP film properties were studied in detail. The epitaxial relationship between BP film and 4H-and 6H-SiC substrate was ð111ÞBP < 112 > BP jj ð0001ÞSiC < 1100 > SiC. Film quality, determined by preferred crystalline orientation and grain size, improved with temperature and PH 3 /B 2 H 6 flow ratio, as indicated by scanning electron microscopy, x-ray diffraction, atomic force microscopy and Raman spectroscopy. In addition, smoother films were obtained when the diborane flow rate was reduced. Rotational twinning in BP films was absent on 4H-SiC(0001) tilted 4 towards ½1100, but was confirmed on both 4H-SiC(0001) tilted 4 towards ½1210, and on-axis 6H-SiC(0001) substrates by synchrotron white beam x-ray topography technique.

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Section: Introductionmentioning

confidence: 98%

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Padavala

Frye

Ding

et al. 2015

Solid State Sciences

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“…The spots indicated by hexagons confirm the presence of BP(111) rotational twins, the most commonly observed defects among the III−V compound semiconductors. 9,20,22,28 These defects were formed due to the symmetry mismatch between BP(111) with 3-fold symmetry and underlying AlN(0001) substrate with 6-fold symmetry.…”

Section: Resultsmentioning

confidence: 99%

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Padavala

Frye

Wang

et al. 2015

Crystal Growth & Design

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The boron phosphide (BP) semiconductor has many remarkable features, including high thermal neutron capture cross section of the 10 B isotope, making it attractive for neutron detection applications. Effective and efficient neutron detection require BP to also have high crystal quality with optimum electrical properties. Here, we present the heteroepitaxial growth of high quality BP films on a superior aluminum nitride(0001)/sapphire substrate by chemical vapor deposition. The effect of process variables on crystalline and morphological properties of BP was examined in detail. BP deposited at high temperatures and high reactant flow rate ratios produced films with increased grain size and improved crystalline orientation. Narrower full width at half-maximum values of BP Raman peaks (6.1 cm −1 ) and ω rocking curves (352 arcsec) compared to values in the literature confirm the high crystalline quality of produced films. The films were n-type with the highest electron mobility of 37.8 cm 2 /V·s and lowest carrier concentration of 3.15 × 10 18 cm −3 . Rotational twinning in BP due to degenerate epitaxy caused by 3-fold BP(111) on 6-fold AlN(0001) was confirmed by synchrotron white beam X-ray topography. This preliminary study showed that AlN is an excellent substrate for growing high quality BP epitaxial films with promising potential for further enhancement of BP properties.

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“…In 1971, Chu et al performed the first BP growth on SiC, but characterized only the surface crystallinity using reflection electron diffraction [9]. In 2005, Udagawa et al characterized a thin <1 1 1> BP layer (200-440 nm) grown on (0 0 0 1) 6H-SiC using high-resolution transmission electron microscopy (HRTEM) [10]. They observed coherent twin boundaries and random atomic configurations at the BP/SiC interface, but yet were unable to study the microstructure evolution in a larger scale due to the limited film thickness.…”

Section: Introductionmentioning

confidence: 99%

“…10 B (20% of natural abundance boron) has a large neutron absorption cross section (3840 barns) and generates 2.3 MeV of energy by the reaction [1], 10 B + n → 7 Li + ˛ + 2.3 MeV.…”

Section: Introductionmentioning

confidence: 99%

Structure characterization and strain relief analysis in CVD growth of boron phosphide on silicon carbide

Abbott

Brasfield

et al. 2015

Applied Surface Science

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a b s t r a c tBoron phosphide (BP) is a material of interest for development of a high-efficiency solid-state thermal neutron detector. For a thick film-based device, microstructure evolution is key to the engineering of material synthesis. Here, we report epitaxial BP films grown on silicon carbide with vicinal steps and provide a detailed analysis of the microstructure evolution and strain relief. The BP film is epitaxial in the near-interface region but deviates from epitaxial growth as the film develops. Defects such as coherent and incoherent twin boundaries, dislocation loops, stacking faults concentrate in the near-interface region and segment this region into small domains. The formation of defects in this region do not fully release the strain originated from the lattice mismatch. Large grains emerge above the near-interface region and grain boundaries become the main defects in the upper part of the BP film.

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High-resolution TEM characterization of MOVPE-grown (111)-BP layer on hexagonal 6H (0001)-SiC

Cited by 5 publications

References 5 publications

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Structure characterization and strain relief analysis in CVD growth of boron phosphide on silicon carbide

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