High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers

Liu, J.Q.; Wang, J.F.; Liu, Y.F.; Huang, Kai; Hu, Xiaojian; Zhang, Y.M.; Xu, Yu; Xu, Ke; Yang, Hui

doi:10.1016/j.jcrysgro.2009.01.050

Cited by 37 publications

(23 citation statements)

References 22 publications

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“…(As it has been recently found by the authors of the present paper, it is quite feasible even for ∼10 μm thick epilayers.) The results of the study demonstrate that the decrease in dislocation density with epilayer thickness is more rapid for the screw component of the density that is in agreement with previous experimental observations of [11] but in contrast to theoretical results of [17], which predicted the limitative role of screw dislocations in the decrease due to their low mobility.…”

Section: Results Of the Xrd Measurementssupporting

confidence: 89%

“…Even in simplified methods the assumptions on the nature of the broadening are required. The attempt to apply XRD peak profile analysis to calculation of the dislocation density in HVPE GaN [11] first required modification of the existing method; second, introduced new parameters to be fitted without any physical meaning attached. Diffuse Xray scattering from epitaxial layers was used for calculation of just the screw component of the dislocation density in [12].…”

Section: X-ray Diffraction Experimentsmentioning

confidence: 99%

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A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

Ivantsov¹,

Volkova²

2012

ISRN Condensed Matter Physics

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It has been shown during the present study that the E-etching at elevated temperatures can be adopted for the dislocation etching in hydride vapor-phase epitaxy (HVPE) GaN layers. It has been found that the X-ray diffraction (XRD) evaluation of the dislocation density in the thicker than 6 μm epilayers using conventional Williamson-Hall plots and Dunn-Koch equation is in an excellent agreement with the results of the elevated-temperature E-etching. The dislocation distribution measured for 2-inch GaN-onsapphire substrate suggests strongly the influence of the inelastic thermal stresses on the formation of the final dislocation pattern in the epilayer.

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Section: Results Of the Xrd Measurementssupporting

confidence: 89%

Section: X-ray Diffraction Experimentsmentioning

confidence: 99%

A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

Ivantsov¹,

Volkova²

2012

ISRN Condensed Matter Physics

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“…In contrast to structure A with the full width at half-maximum (FWHM) values of GaN (0002) for 483 arcsec and GaN (1012) for 1098 arcsec, structure B with discontinuous interfaces and large pits has the higher FWHM values in GaN (0002) and (1012) for 750 and 1251 arcsec, respectively. The FWHM of ω-scan and mosaic model can be described as [21] where βω is the FWHM measured from different reflections; ( ) and ( ) are the contributions of screw and edge dislocations to the FWHM of ω-scan. ρe and ρs are the edge and screw dislocation densities; Δωs and Δωe are referred to as tilt and twist, which can be calculated by FWHM of (0002) and (1010), respectively.…”

Section: Epilayer Characteristicsmentioning

confidence: 99%

On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

et al. 2017

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Abstract:In this study, low-temperature (LT) and high-temperature (HT) AlN insertion layers (ILs) grown at 680 and 970 • C were integrated with 3.7-µm GaN-based heterostructure grown on 150-mm Si (111) substrates by metalorganic chemical vapor deposition. Under a V/III flow ratio of 1960, the GaN epilayer with a continuous interface resulting from the LT AlN IL was subject to a compressive stress of −0.109 GPa. However, the GaN epilayer with discontinuous interfaces resulting from the HT AlN IL growth under the same flow ratio was subject to a tensile stress of 0.174 GPa. To realize continuous interfaces between the GaN epilayer and HT AlN IL, a higher V/III ratio of 5960 was utilized to suppress the decomposition of GaN. It results in changing the stress state of the GaN-based heterostructure from tensile to compressive. This strategic finding indicates that a stress-controllable GaN on Si can be achieved via the incorporation of HT AlN ILs. A minimum curvature at 5 km −1 is demonstrated for the 3.7-µm GaN-based heterostructure on a 150-mm Si (111) substrate, which has high potential for power switching device applications.

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“…The surface features are closely related to the presence of microstructural defects in materials [22]. The root-mean-square (RMS) roughness values in an area of 2 μm×2 μm for the three samples were 0.150, 0.095 and 0.195 nm, respectively.…”

Section: Resultsmentioning

confidence: 95%

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films

Xing

Wang

et al. 2011

Chin. Sci. Bull.

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The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiN x interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for ( 1102 ) reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0×10 8 cm −2. GaN films were grown on sapphire substrates by metal organic chemical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiN x interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.growth models, defects, metal-organic chemical vapor deposition, GaN, SiN x

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High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers

Cited by 37 publications

References 22 publications

A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films

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