On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

Lin, Pei-Chun; Tien, Ching-Ho; Wang, Tzu-Yu; Chen, Che-Lin; Ou, Sin-Liang; Chung, B.‐C.

doi:10.3390/cryst7050134

Cited by 15 publications

(11 citation statements)

References 21 publications

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“…4b), AlN/GaN superlattice, 23 or multiple AlN stress release insertion layers. 24 High-performance GaN epitaxial layers have been successfully grown on 6-inch (c.150 mm) and 8-inch (c.200 mm) (111) Si wafers. 20 Despite the aforementioned challenges, GaN-on-Si power transistors are still an attractive option to compete with other GaN transistors on different substrates, thanks to their cost-effectiveness and simple fabrication steps for mass production.…”

Section: Gan-on-si Substratementioning

confidence: 99%

“…Flip-chip assembly has been introduced to provide direct electrical connections without bonding wires. 24,43,101 Many researchers have reported that the contact between a metal wire and a pad surface is one of the weakest points which tends to cause mechanical failures before the transistor malfunctions. [102][103][104] Therefore, modules assembled with the flip-chip bonding are preferred due to the absence of wire-to-pad contacts.…”

Section: Packagingmentioning

confidence: 99%

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Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

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Gallium nitride (GaN) power transistors have attracted significant interest in the power electronics industry over the past decade as the next-generation power semiconductor devices. GaN power transistors are suitable for high power and high frequency applications due to their higher electron mobility, temperature tolerance, electrical conductivity, critical breakdown electric field, and breakdown voltage compared to the conventional silicon-based transistors and other wide bandgap (WBG) power transistors. In particular, GaN-on-silicon (GaN-on-Si) technology has opened up the possibility of manufacturing high-performance, low-cost WBG power devices in silicon-compatible fabrication facilities. The first GaN power transistor structure to be developed was the normally-ON depletion mode (D-mode) device. It relies on the highly mobile two-dimension electron gas (2DEG) at the GaN/AlGaN epitaxial layers' interface to provide very low on-resistance. The normally-OFF enhancement mode (E-mode) GaN power transistor soon became available by controlling the 2DEG using various gate structures. This paper provides a review of the developments of GaN power transistors followed by a survey on current state-of-the-art GaN power technologies and applications, including comparisons between GaN growth substrates and developments of enhancement mode (E-mode) device structures and their process techniques. Moreover, developments of power module designs are also addressed, including gate driver designs and their requirements, and packaging techniques for power transistors and power modules.

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Section: Gan-on-si Substratementioning

confidence: 99%

Section: Packagingmentioning

confidence: 99%

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

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“…In the first paper, Y. Kawakami's group studied the interface formation of AlN on sapphire substrate by EVPE, which is a new AlN bulk fabrication method using Al and N 2 as precursors, for AlN bulk crystals that are promising substrates for AlGaN-based deep ultraviolet light emitters and high-frequency electronic devices with high-breakdown voltages [15]. For the second paper, Wuu's group investigated the role of AlN insertion layer in stress control of GaN on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD) for high-frequency and high-power electronic devices [16]. Horng's group studied the effects of a corona-discharge plasma treatment on the performance of an AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor fabricated on Si substrates [17].…”

Section: Current Perspectives In the Applications Of Nanostructured Ganmentioning

confidence: 99%

Advances in GaN Crystals and Their Applications

2018

Crystals

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This special issue looks at the potential applications of GaN-based crystals in both fields of nano-electronics and optoelectronics. The contents will focus on the fabrication and characterization of GaN-based thin films and nanostructures. It consists of six papers, indicating the current developments in GaN-related technology for high-efficiency sustainable electronic and optoelectronic devices, which include the role of the AlN layer in high-quality AlGaN/GaN heterostructures for advanced high-mobility electronic applications and simulation of GaN-based nanorod high-efficiency light-emitting diodes for optoelectronic applications. From the results, one can learn the information and experience available in the advanced fabrication of nanostructured GaN-based crystals for nano-electronic and optoelectronic devices.Keywords: GaN; AlN; InN; AlGaN; InGaN; MOSFET; LED Applications of GaN-Based CompoundsReviewing the application of semiconductor compounds, it stemmed from the replacement of vacuum tube by transistors in electronics [1,2]. The first "point-contact transistor" was invented by J. Bardeen and W. H. Brattain with "three-electrode elements" utilizing semiconductor materials, p-type, and n-type germaniums [1]. As the germanium crystal was substituted by silicon crystal to make a p-n-p bipolar junction transistor [3] or metal-oxide-semiconductor field effect transistor (MOSFET) [4], the electronic property of transistor was tremendously enhanced and the silicon-based electronic industry was then established. However, the VI-elements (i.e., Ge, Si) are basically indirect band structure, which is not suitable for the application of photo-electronic devices. When the IV-elements (Si or Ge) are replaced by GaAs-based III-V compounds, the electron mobility of MOSFET can be significantly increased [5] and quantum effects (e.g., normal and fractional quantum Hall effects) can be clearly detected [6,7]. In addition to the high-speed transistor applications, the direct band structures of GaAs-based III-V compounds extended the semiconductor materials to photo-electronic applications, in which the IV-elements (Si or Ge) are exclusive due to the indirect band structure. In such a way, the GaAs-based heterostructures were successfully utilized in the information and communication technology [8]. Moreover, many opto-electronic devices were invented with GaAs-compounds such as light-emitting diodes (LED) and laser diodes (LD). In other words, GaAs-based III-V compounds can be designed to apply in both electronic and opto-electronic devices. However, the light-sources made of GaAs-based compounds (group III-arsenides) were limited to the emitting photon wavelength greater than 760 nm (red light) due to the bandgap energy (i.e., E g = 1.424 eV of GaAs). On the other hand, the direct bandgap energy of group III-nitrides can cover the range from 0.7 eV (InN), 3.4 eV (GaN), to 6.2 eV (AlN). Therefore, the III-nitrides can offer a simple material system, replacing III-arsenides to integrate both electronic and opto-e...

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“…Comparatively, high-temperature (HT)-AlN layers yield reduced dislocation densities and promote the relaxation of compressive strain due to an increased Al migration length. In addition, many studies are also investigated the high-quality GaN layer grown on a Si substrate using the HT- and LT-AlN growth process [ 17 , 18 ]. Moreover, Hirayama et al used an AlN buffer layer grown with pulsed NH 3 flow on a sapphire substrate [ 19 ], which is an effective way to enhance the lateral migration of Al atoms and produce a smooth epitaxial surface.…”

Section: Introductionmentioning

confidence: 99%

Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

Kim

Lee

et al. 2021

Micromachines

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We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The photoluminescence peak positions and Raman spectra indicate that the internal tensile strain of the GaN layer is effectively relaxed without generating cracks. The LEDs embedded with an AlN buffer layer using NH3 growth interruption at 300 mA exhibited 40.9% higher light output power than that of the reference LED embedded with the AlN buffer layer without NH3 growth interruption. These high performances are attributed to an increased radiative recombination rate owing to the low defect density and strain relaxation in the GaN epilayer.

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On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

Cited by 15 publications

References 21 publications

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Advances in GaN Crystals and Their Applications

Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

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