High resolution X-ray diffraction defect structure characterization in Si-doped and undoped GaN films

Zielińska‐Rohozińska, E.; Regulska, M.; Harutyunyan, V. V.; Pakuła, K.; Borowski, J.

doi:10.1016/s0921-5107(01)00996-5

Cited by 7 publications

(10 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is well known that epitaxial films of III-nitrides grow in columnar structures of relatively perfect material bounded by dislocation arrays (the so-called mosaic model) [ 14 – 16 ]. Both the distribution of the out-of-plane orientation angles ( α ) and of the lateral sizes ( D ) of crystalline columns cause the broadening of symmetrical and asymmetrical RSMs.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

X-ray Reciprocal Space Mapping of Graded Al x Ga1 − x N Films and Nanowires

Stanchu¹,

Kuchuk²,

Kladko³

et al. 2016

Nanoscale Res Lett

View full text Add to dashboard Cite

The depth distribution of strain and composition in graded AlxGa1 − xN films and nanowires (NWs) are studied theoretically using the kinematical theory of X-ray diffraction. By calculating reciprocal space maps (RSMs), we demonstrate significant differences in the intensity distributions from graded AlxGa1 − xN films and NWs. We attribute these differences to relaxation of the substrate-induced strain on the NWs free side walls. Finally, we demonstrate that the developed X-ray reciprocal space map model allows for reliable depth profiles of strain and Al composition determination in both AlxGa1 − xN films and NWs.

show abstract

Section: Resultsmentioning

confidence: 99%

“…( 12 )) and log-normal (Eq. ( 13 )) distributions of α and D have to be used to correctly describe the broadening of the symmetrical and asymmetrical RSMs for III-nitride [ 14 – 17 ]: …”

Section: Methodsmentioning

confidence: 99%

X-ray Reciprocal Space Mapping of Graded Al x Ga1 − x N Films and Nanowires

Stanchu¹,

Kuchuk²,

Kladko³

et al. 2016

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…It is reported that two strain components coexist in GaN, biaxial and hydrostatic stress field. [17] Their origins are physically different. The biaxial residual compressive strain is expected to occur on cooling due to the difference in thermal expansion coefficients between GaN and sapphire, [18,19] and in most cases, it will be reduced by generating a large number of edge dislocations.…”

Section: Resultsmentioning

confidence: 99%

Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure

et al. 2009

View full text Add to dashboard Cite

This paper reports on a comparative study of the spatial distributions of the electrical, optical, and structural properties in an AlGaN/GaN heterostructure. Edge dislocation density in the GaN template layer is shown to decrease in the regions of the wafer where the heterostructure sheet resistance increases and the GaN photoluminescence band-edge energy peak shifts to a high wavelength. This phenomenon is found to be attributed to the local compressive strain surrounding edge dislocation, which will generate a local piezoelectric polarization field in the GaN layer in the opposite direction to the piezoelectric polarization field in the AlGaN layer and thus help to increase the two-dimensional electron gas concentration.

show abstract

“…14 It is also possible that the enhanced PL intensity is related to the Si-dopinginduced lower interface strain and lower coherent scattering areas. 21,22 Figure 4 shows measured forward I-V characteristics of the two fabricated LEDs. With 20 mA injection current, it was found that forward voltages were 3.29 and 3.17 V for the LEDs with undoped barriers and Si-doped barriers, respectively.…”

Section: Resultsmentioning

confidence: 99%

InGaN∕GaN Multiple-Quantum-Well LEDs with Si-Doped Barriers

Hung

Lam²,

Chang

et al. 2008

J. Electrochem. Soc.

View full text Add to dashboard Cite

InGaN/GaN multiple-quantum-well ͑MQW͒ light-emitting diodes ͑LEDs͒ with undoped and Si-doped barriers were fabricated. It was found that we could enhance crystal quality of the MQW structure by introducing Si doping into the GaN barrier layers. It was also found that carriers can be injected into the MQW active region more easily for the LED with Si-doped barriers. With a 20 mA injection current, it was found that forward voltages were 3.29 and 3.17 V for the LEDs with undoped barriers and Si-doped barriers, respectively. The output power and external quantum efficiency of the LED with Si-doped barriers were also found to be larger.

show abstract

High resolution X-ray diffraction defect structure characterization in Si-doped and undoped GaN films

Cited by 7 publications

References 10 publications

X-ray Reciprocal Space Mapping of Graded Al x Ga1 − x N Films and Nanowires

X-ray Reciprocal Space Mapping of Graded Al x Ga1 − x N Films and Nanowires

Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure

InGaN∕GaN Multiple-Quantum-Well LEDs with Si-Doped Barriers

Contact Info

Product

Resources

About