High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

Fitouri, H.; Habchi, Mohamed Mourad; Rebey, A.

doi:10.5772/65404

“…A comparison of the XRD patterns reveals that thermal annealing produced a (100) crystal orientation in the Si-Sn codoped n-GaN films; thus, thermal annealing does not only improve the crystalline quality in the (002) c-axis orientation but also results in a (100) crystal orientation due to lattice rearrangement. Compared with the XRD plot of the undoped GaN films, the annealed Si-Sn codoped n-GaN films had a slightly increased 2θ angle; thus, Si and Sn can be effectively doped in a GaN thin-film host lattice by cosputtering and can help lower tensile thin-film stress [28].…”

Section: Resultsmentioning

confidence: 98%

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Liu

¹

,

Chang

²

,

Chen

³

et al. 2023

Semicond. Sci. Technol.

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DC-pulse magnetron sputtering was used to deposit a 300-nm-thick Si–Sn codoped n-type GaN film on an amorphous glass substrate with a ZnO buffer layer. Postgrowth thermal annealing at 300, 400, or 500 °C was performed to improve the crystal quality of the GaN thin films. Hall measurements revealed that the film annealed at 500 °C had the lowest thin-film resistance of 0.82 Ω cm and highest carrier concentration of 3.84 × 1019 cm−3. Atomic force microscopy was used to investigate the thin-film surface morphology; the film annealed at 500 °C had an average grain size and surface roughness of 25.3 and 2.37 nm, respectively. Furthermore, the X-ray diffraction (XRD) measurements revealed a preferential (002) crystal orientation and hexagonal wurtzite crystal structure at 2θ ≈ 34.5° with a narrow full width at half maximum value of 0.387°. Compositional analysis of the films was conducted with Xray photoelectron spectroscopy and verified that both Si and Sn were doped into the GaN film by means of covalent bonding with N atoms. Finally, the film annealed at 500 °C had a high optical transmittance of 82.9% at 400–800 nm, a high figure of merit factor of 490.3 ×10−3 Ω−1, and low contact resistance of 567 Ω; these excellent optoelectronic properties were attributed to the film’s high electron concentration and indicate that the material is feasible for application in transparent optoelectronic devices.

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“…На основе данных высокоразрешающей дифрактометрии можем рассчитать величину остаточных напряжений в эпитаксиальной пленке GaAs [5,23] и коэффициент релаксации [24,25] соответственно как…”

Section: экспериментальные данныеunclassified

Структурно-спектроскопические исследования эпитаксиальных слоев GaAs, выращенных на податливых подложках на основе сверхструктурного слоя и протопористого кремния

Середин¹,

Голощапов²,

Худяков³

et al. 2021

Физика И Техника Полупроводников

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Цель работы заключалась в исследовании влияния нового типа податливых подложек на основе сверхструктурного слоя (SL) AlGaAs и слоя протопористого кремния (proto-Si), сформированного на c-Si, на практическую реализацию и особенности эпитаксиального роста слоя GaAs в методе MOCVD. Впервые показано, что низкотемпературный рост эпитаксиальных пленок GaAs высокого кристаллического качества может быть реализован за счет использования податливых подложек SL/proto-Si. Введение SL в состав податливой подложки в дополнение к proto-Si позволяет нивелировать ряд негативных эффектов низкотемпературного роста, снизить уровень напряжений в эпитаксиальном слое, защитить от автолегирования атомами кремния, сократить число технологических операций по росту переходных буферных слоев, улучшить структурные и морфологические характеристики эпитаксиального слоя. Ключевые слова: GaAs, Si, por-Si, сверхструктурный слой.

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“…These studies suggest a bimodal strain and crystalline quality distributions as functions of depth. In fact, high resolution XRD is the ideal technique to study the implantation induced strain because of the high sensitivity to variations of less than 0.001 Å in the lattice parameters [24]. Using as example the AlGaN compound studied, a variation of 0.001 Å in the lattice parameter results in an angular difference of ∼0.017 • in 2θ for the (0004) reflection measured which is perfectly attainable in high resolution equipment's.…”

Section: Introductionmentioning

confidence: 99%

Simulating the effect of Ar⁺ energy implantation on the strain propagation in AlGaN

Cabaço¹,

Faye²,

Araújo³

et al. 2021

J. Phys. D: Appl. Phys.

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In this work, high quality AlGaN layers, grown by metal organic chemical vapour deposition, on a commercial c-sapphire substrate, were implanted at a fluence of 1 × 10 14 A r + ⋅ c m − 2 . Implantation was performed for energies between 25 and 250 keV to explore the strain field created with increasing penetration of the implanted ions. Perpendicular to the sample surface deformation was determined through simulations of the 2 θ − ω scans of the allowed (0002), (0004) and (0006) AlGaN reflections. According to the simulations, the peak attributed to the implanted region is well defined using a small number of layers with specific thickness, deformation, and static Debye–Waller factors. Although similar ion end of range, calculated via Monte Carlo simulations of ions in matter, of around 240–250 nm for 200 keV implanted normal to the sample surface and 250 keV at 38°, the strain distribution in depth turns out quite different in these samples. According to dynamical theory of x-ray diffraction simulations, the argon ions penetrate deeper on the former, which might be related to channeling effects, while maximum damage is observed in the latter. Damage accumulation is suggested to be a complex mechanism, where damage maximum and damage extension play equivalent important roles.

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High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

Cited by 8 publications

References 31 publications

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Simulating the effect of Ar⁺ energy implantation on the strain propagation in AlGaN

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High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

Cited by 8 publications

References 31 publications

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Simulating the effect of Ar+ energy implantation on the strain propagation in AlGaN

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Simulating the effect of Ar⁺ energy implantation on the strain propagation in AlGaN