High-Resolution X-ray Diffraction Studies of ZnSnAs2 Epitaxial Films Nearly Lattice-matched to InP Substrates

Asubar, Joel T.; Agatsuma, Yuji; Yamaguchi, Hiroshi; Nakamura, Shigenari; Yang, Jinbo; Uchitomi, Naotaka

doi:10.1016/j.phpro.2010.01.190

Cited by 15 publications

(6 citation statements)

References 9 publications

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“…Both the RSMs show 224 diffraction spots of ZnSnAs

_{2}

and (Zn,Sn,Ga)As

_{2}

, which indicates the epitaxial growth of these thin films. The peak position of the ZnSnAs

_{2}

and (Zn,Sn,Ga)As

_{2}

224 diffraction spot revealed that both thin films are almost fully relaxed, in contrast to the ZnSnAs

_{2}

thin films pseudomorphically grown on InP(001) substrates . This is reasonable because there is an approximately 2–4% lattice mismatch between ZnSnAs

_{2}

or (Zn,Sn,Ga)As

_{2}

thin films and a GaAs substrate.…”

Section: Resultsmentioning

confidence: 95%

See 1 more Smart Citation

Growth and characterization of (Zn,Sn,Ga)As₂ thin films grown on GaAs(001) substrate by molecular beam epitaxy

Toyota

Terauchi

Hidaka

et al. 2017

Physica Status Solidi (b)

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Ga‐incorporated ZnSnAs2 thin films were grown on semi‐insulating GaAs(001) substrate by molecular beam epitaxy, and the structural, compositional, and electrical properties were characterized with respect to achieving conduction‐type control. Compositional analysis with an electron‐probe micro analyzer indicated that Ga atoms are substituted for cation (Zn and Sn) atoms and that the Ga/Sn beam equivalent pressure ratio has only a small influence on the Ga concentration. In addition, the composition ratios of Zn to all the cation sites were 2.0–5.7% smaller than that of Sn. 2θ/θ‐scan X‐ray diffraction analyses confirmed the epitaxial growth of (Zn,Sn,Ga)As2 thin films on GaAs(001) substrates. Reciprocal space maps revealed that these thin films are almost fully relaxed, and the lattice constants are in good agreement with Vegard's law. Hall effect measurements of all the (Zn,Sn,Ga)As2 thin films indicated n‐type conductivity, which was due to the high Ga content of 44.1–47.8% on the cation sites.

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“…Both the RSMs show 224 diffraction spots of ZnSnAs

_{2}

and (Zn,Sn,Ga)As

_{2}

, which indicates the epitaxial growth of these thin films. The peak position of the ZnSnAs

_{2}

and (Zn,Sn,Ga)As

_{2}

224 diffraction spot revealed that both thin films are almost fully relaxed, in contrast to the ZnSnAs

_{2}

thin films pseudomorphically grown on InP(001) substrates . This is reasonable because there is an approximately 2–4% lattice mismatch between ZnSnAs

_{2}

or (Zn,Sn,Ga)As

_{2}

thin films and a GaAs substrate.…”

Section: Resultsmentioning

confidence: 95%

“…The out‐of‐plane and in‐plane lattice constants,

a_{⊥}

and

a_{∥}

, of these thin films, calculated from the peak positions of

Q_{x}

and

Q_{z}

are summarized in Table . The free standing lattice constant

a_{FS}

, is calculated using the relationship :

a_{FS} = \frac{1 - ν}{1 + ν} a_{⊥} + \frac{2 ν}{1 + ν} a_{∥},

and is also shown in Table , assuming a Poisson ratio

ν

of 1/3.…”

Section: Resultsmentioning

confidence: 99%

Growth and characterization of (Zn,Sn,Ga)As₂ thin films grown on GaAs(001) substrate by molecular beam epitaxy

Toyota

Terauchi

Hidaka

et al. 2017

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The special advantage of this ternary compound is that its lattice constant is almost a match to that of InP, which is one of the mainstream semiconductor materials. [10][11][12][13][14][15] In recent years, Mndoped ZnSnAs 2 thin films, (Zn, Mn, Sn)As 2 , have attracted interest because of their ferromagnetic behavior above-roomtemperature in addition to their promise of compatibility with InP-based heterostrutures. 16,17) Through an X-ray fluorescence holographic study using a strong X-ray beam generated by 3rd generation synchrotron radiation at the Spring-8 facility, we have found that Mn atoms occupy both Zn and Sn cation sites.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth and characterization of Cr-doped ZnSnAs₂thin films on InP substrates

Oomae

Sheng

Shinoda

et al. 2020

Jpn. J. Appl. Phys.

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We have investigated the epitaxial growth of Cr-doped ZnSnAs 2 thin films as a function of Zn and Sn fluxes, and characterized their structural, electrical and magnetic properties for possible application in ZnSnAs 2 -based devices. Cr-doped ZnSnAs 2 thin films prepared using growth conditions favoring Cr atom substitution on Sn sites showed hole concentrations on the order of 10 17 cm −3 , but no detectable ferromagnetic properties. On the other hand, films prepared under growth conditions favoring Cr atom substitution on Zn sites, while exhibiting low (nondetectable) hole carrier concentrations, exhibited ferromagnetism even at room-temperature. Our present experimental results are consistent with those reported by Kizaki et al. where they predicted above-room-temperature ferromagnetism for Cr doping at Zn sites in the Cr-doped ZnSnAs 2 system. © 2020 The Japan Society of Applied Physics Experimental methodsCr-doped ZnSnAs 2 (ZnSnAs 2 :Cr) thin films were grown on semi-insulating epi-ready InP(001) substrates using

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“…18) In recent years, Mn-doped ZnSnAs 2 thin films, hereafter referred to as (Zn,Sn,Mn)As 2 thin films, are of particular interest because of their ferromagnetic behaviour above room temperature and their promising compatibility with InP-based heterostructures. 11,19,20) Although the effects of molecular beam epitaxy (MBE) growth parameters on the crystalline quality of ZnSnP 2 21) and ZnSnAs 2 11,18,22) thin films were investigated by several research groups, there have been few studies on the epitaxial growth of Mn-doped chalcopyrites and sphalerites by MBE, probably owing to the complex growth parameters compared with those of II-VI-and III-V-based magnetic semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films

Ogo

Hidaka

Toyota

et al. 2017

Jpn. J. Appl. Phys.

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The effects of cationic growth parameters of molecular beam epitaxy on the crystalline and magnetic properties of Mn-doped ZnSnAs2, (Zn,Sn,Mn)As2, thin films were investigated in order to control ferromagnetism at room temperature. The combination of cationic beam equivalent pressures of Zn, Sn, and Mn atoms was varied at an optimal substrate temperature of 320 °C. Clear hysteresis loops were observed for the samples at 300 K, indicating ferromagnetism at room temperature. We found that the change in Zn flux does not significantly affect the composition of (Zn,Sn,Mn)As2 thin films and ferromagnetic properties and that ferromagnetic properties definitely depend on the amounts of Mn and Sn fluxes. X-ray photoelectron spectroscopy analysis revealed that the sum of the amounts of Mn2+ and Mn4+, which may contribute to the ferromagnetism in (Zn,Sn,Mn)As2 thin films, was approximately 60–70% of the total Mn amount with respect to ferromagnetic (Zn,Sn,Mn)As2 samples. This result indicates that the ferromagnetic properties could be controlled in multilayered (Zn,Sn,Mn)As2 by changing the combination of Zn, Sn, and Mn fluxes.

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High-Resolution X-ray Diffraction Studies of ZnSnAs2 Epitaxial Films Nearly Lattice-matched to InP Substrates

Cited by 15 publications

References 9 publications

Growth and characterization of (Zn,Sn,Ga)As₂ thin films grown on GaAs(001) substrate by molecular beam epitaxy

Growth and characterization of (Zn,Sn,Ga)As₂ thin films grown on GaAs(001) substrate by molecular beam epitaxy

Epitaxial growth and characterization of Cr-doped ZnSnAs₂thin films on InP substrates

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films

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High-Resolution X-ray Diffraction Studies of ZnSnAs2 Epitaxial Films Nearly Lattice-matched to InP Substrates

Cited by 15 publications

References 9 publications

Growth and characterization of (Zn,Sn,Ga)As2 thin films grown on GaAs(001) substrate by molecular beam epitaxy

Growth and characterization of (Zn,Sn,Ga)As2 thin films grown on GaAs(001) substrate by molecular beam epitaxy

Epitaxial growth and characterization of Cr-doped ZnSnAs2thin films on InP substrates

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs2thin films

Contact Info

Product

Resources

About

Growth and characterization of (Zn,Sn,Ga)As₂ thin films grown on GaAs(001) substrate by molecular beam epitaxy

Growth and characterization of (Zn,Sn,Ga)As₂ thin films grown on GaAs(001) substrate by molecular beam epitaxy

Epitaxial growth and characterization of Cr-doped ZnSnAs₂thin films on InP substrates

Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films