be attributed to the absence of an n-type equivalent of PEDOT, the overall scarcity of n-type OSCs, and the inefficiency of most n-type dopants. Since most good OSCs that are used as n-type materials like [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and N2200 have a lowest unoccupied molecular orbital (LUMO) around −4.0 eV, [7,8] it is very difficult to realize a stable dopant with a HOMO above −4.0 eV as would be required for efficient electron transfer. Fortunately, Wei et al. have reported a promising material, (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI), that can be used as stable n-type dopant due to a two-step thermally activated doping mechanism. [9] Very recently, Huang et al. used this dopant to achieve record values for PF = 105 µW m −1 K −2 and ZT = 0.11 at room temperature for the small molecule A-DCV-DPPTT. [10] Some reports also have demonstrated that dihydro-1H-benzoimidazol-2-yl (N-DBI) derivatives can improve the electrical conductivity by several orders of magnitude in n-type OTE by solution-processing. For example, Schlitz et al. have shown that solution mixtures of P(NDIOD-T2) with 9 mol% N-DBI derivatives can achieve σ ≈ 1 S m −1 and a PF over 0.6 µW m −1 K −2 . [11] Yuan et al. reported a small-molecule 2DQTT-o-OD that, with 10 wt% of a novel N-DBI derivative incorporated in solution, acquires a PF of 17.2 µW m −1 K −2 at room temperature. [12] Shi et al. achieved a high electron mobility in FBDPPV with σ ≈ 1400 S m −1 and PF ≈ 28 µW m −1 K −2 , when adding around 5 wt% N-DMBI in solution. [13] Despite the positive effect of N-DMBI and N-DBI derivatives on electrical conductivity, it probably fails to further increase σ and PF upon further increasing the volume fraction in solution mixtures due to degradation of the blend morphology. [14] Liu et al. demonstrated a modified fullerene derivative, PTEG-1, that shows an increased miscibility at the nanoscale level and thereby achieved a PF of 16.7 µW m −1 K −2 with σ ≈ 205 S m −1 at 40 mol% of N-DMBI. [15] For p-type OTE, most reported experimental data seem to follow an empirical quasi-universal power law relationship between the Seebeck coefficient S and conductivity as S ∝ σ − 1/4 . [2,3] In view of the limited number of reported data, it is still unclear whether n-type OTE also follow this power law, and different power law slopes have been reported. [15,16] Here, we introduce a novel, inverse-sequential doping procedure that mitigates the need for solvent orthogonality in conventional sequential doping to investigate the potential of deposited on a previously cast dopant 4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)-N,N-diphenylaniline film to achieve a very high power factor PF ≈ 35 µW m −1 K −2 with a conductivity σ ≈ 40 S m −1 is introduced. It is also shown that n-type organic semiconductors obey the −1/4 power law relation between Seebeck coefficient S and σ that are previously found for p-type materials. An analytical model on basis of variable range hopping unifies these results. Th...