2022
DOI: 10.35848/1347-4065/ac3a93
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High Seebeck coefficient in PVD-WS2 film with grain size enlargement

Abstract: A high Seebeck coefficient of 1.17 × 103 μV/K was achieved using an on-chip thermoelectric device for a WS2 atomic-layer film, which was synthesized by ultra-high vacuum RF-magnetron sputtering as a function of sputtering power. A layered structure in parallel to SiO2/Si substrate was confirmed from the transmission electron microscopy and X-ray diffraction spectra. The grain size and peak intensities of the Raman spectra increase with a decrease in the sputtering power. Accordingly, the resistivity and activ… Show more

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Cited by 6 publications
(8 citation statements)
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“…1(a) show that the peak of the (002) plane, which indicates the c-axis orientation of the MoS 2 film, is present in all the samples. Similar shaped peaks with our results have been reported in polycrystalline TMDC thin films formed horizontally on the substrate surface by sputtering, 43,45) therefore the MoS 2 films in this study are considered to have a similar crystal structure whether with or without Nb doping. The in-plane measurements in Fig.…”
Section: Resultssupporting
confidence: 88%
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“…1(a) show that the peak of the (002) plane, which indicates the c-axis orientation of the MoS 2 film, is present in all the samples. Similar shaped peaks with our results have been reported in polycrystalline TMDC thin films formed horizontally on the substrate surface by sputtering, 43,45) therefore the MoS 2 films in this study are considered to have a similar crystal structure whether with or without Nb doping. The in-plane measurements in Fig.…”
Section: Resultssupporting
confidence: 88%
“…The electrical properties of the Nb-doped MoS 2 films were measured using the circular transmission line method (CTLM) 42) and van der Pauw method. 43) Titanium nitride with a thickness of 50 nm was deposited by sputtering, followed by wet etching using an ammonia-hydrogen peroxide mixture and photoresist to form the bottom electrode. Then, a 2.5 nm thick MoS 2 film was deposited.…”
Section: Experimental Methodsmentioning
confidence: 99%
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“…7,8 Besides this, the WS 2 film can also be used in thermoelectric generators owing to the high Seebeck coefficient. 9 The effective heat dissipation plays a crucial role to maximize the optoelectronic device performance because, at a higher current density, a large amount of heat is subsequently generated due to Joule heating, leading to an increase in the local temperature which results in a decrease in carrier mobility and even thermal damage to the devices. Consequently, understanding the phonon and thermal properties, particularly obtaining the values of the thermal conductivity κ and interface thermal conductance (ITC) g becomes increasingly urgent.…”
Section: ■ Introductionmentioning
confidence: 99%
“…In addition, monolayer WS 2 -based photodetectors can realize high photoresponsivity detection . Moreover, the capability of controlling the spin and valley degrees of freedom in WS 2 paves the new way for fabricating spintronic and valleytronic devices. , Besides this, the WS 2 film can also be used in thermoelectric generators owing to the high Seebeck coefficient …”
Section: Introductionmentioning
confidence: 99%