High Selectivity Magnetically Enhanced Reactive Ion Etching of Boron Nitride Films

Cote, D.; Nguyen, S.; Dobuzinsky, D.; Basa, C.; Neureither, B.

doi:10.1149/1.2059354

Cited by 5 publications

(4 citation statements)

References 2 publications

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“…434,436 For this reason, B 2 O 3 is likely unsuitable for low-k interconnect applications. Boron nitride (BN) does not exhibit the same extreme hygroscopic behavior as B 2 O 3 and has been investigated for numerous electronic applications as a gate dielectric, 437 ILD, 434 ES, 438 DB, 439 HM, 440 polish stop, 441 and UV photo-detector / light emitting diode. 442,443 PECVD a-BN:H films have been reported to have reasonably low k values of 4.0-5.7 and high mass densities of 1.7-1.9 g/cm 3 that make it of interest for potential low-k DB interconnect applications.…”

Section: Future Trends and Research Needed For Low-k Db And Es Materialsmentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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Section: Future Trends and Research Needed For Low-k Db And Es Materialsmentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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“…Poly(borosilazanes) have been investigated as precursors for ceramic materials that have the potential to provide oxidation protective barrier films. A number of workers have reported ceramic materials that involve boron nitride and silicon nitride mixtures. − Some of these ceramic materials are multicomponent systems consisting of mixtures of BN and Si 3 N 4 . In some cases the ceramic materials are prepared by chemical vapor deposition (CVD), and in other cases they are prepared by using polymers as precursors.…”

Section: Introductionmentioning

confidence: 99%

Surface Studies of Potentially Oxidation Protective Si−B−N−C Films for Carbon Fibers

Rooke

Sherwood

1997

Chem. Mater.

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The paper reports a study of CVD deposited thin films (1−5 μm) of an Si−B−N−C ceramic polymer coating onto a tow of carbon fibers. The coating process was developed with the goal of good adhesion and good oxidation protection for the fibers when exposed to a reactive oxygen environment. Core and valence band photoemission was used to monitor the surface chemistry of the films. An ab initio calculation of a ceramic fragment indicated that the valence band spectra was consistent with a surface mixture of ceramic Si−B−N−C and SiO2. To prevent cracking of the coating on the fibers, it was necessary to electrochemically oxidize the carbon fibers before applying the CVD deposited ceramic film. Upon exposure to reactive oxygen, the coating rapidly formed an oxide scale, which may offer a very stable diffusion barrier to further oxidation. Thermogravimetric analysis suggests that the coating retarded gasification of the fiber up to high temperatures, with a weight loss of less than 25% when compared to an unprotected fiber which was completely gasified at 950 °C. Most of the weight loss was probably due to oxidation down the unprotected fiber ends rather than oxidation of the protected fiber. We believe that this ceramic has considerable potential as an oxidation barrier for carbon fibers.

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“…[215][216][217] However, there are scaling limits in k due to the need to maintain a dense enough material that can still function as a Cu diffusion barrier (DB) material as well as ES. 218 As for the transistor, boron-based materials such as BNH [219][220][221][222] and BCH 223,224 have also shown some promise as potential lower-k ES/DB candidates. As we will discuss later, additional etch considerations created by the more complex patterning schemes recently adopted have led to the exploration of a still wider range of materials as candidate ES/DB materials.…”

Section: Spacermentioning

confidence: 99%

“…This is primarily a result of their high optical transparency and strong resistance to fluorine based dry etches. 37,264 Similarly, boron-based dielectrics have also gained significant interest as alternative or complementary hard masking materials 265,266 due to their significant dry etch rates in fluorine-based chemistries, 37,219,267 low wet etch rates in dilute HF, 223,268 and tunable bi-axial film stress 37 and mechanical properties. 264,269 The high resistance of high-k oxides and nitrides to fluorinated plasma chemistries has also led to significant interest for etch stopping applications in the final pattern transfer to the target material.…”

Section: Color Technology and The Four-color Problemmentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

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High Selectivity Magnetically Enhanced Reactive Ion Etching of Boron Nitride Films

Cited by 5 publications

References 2 publications

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Surface Studies of Potentially Oxidation Protective Si−B−N−C Films for Carbon Fibers

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

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