2000
DOI: 10.1063/1.1331093
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High sensitivity measurement of implanted As in the presence of Ge in GexSi1−x/Si layered alloys using trace element accelerator mass spectrometry

Abstract: Various devices can be realized on strained GeSi/Si substrates by doping the substrate with different impurities such as As. As is an n-type dopant in both Ge and Si. As cross contamination can also arise during germanium preamorphization implantation due to inadequate mass resolution in the implanter. Thus, it is important to be able to accurately measure low-level As concentrations in the presence of Ge. Secondary ion mass spectrometry (SIMS) is the standard technique for these types of measurements but is c… Show more

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Cited by 10 publications
(2 citation statements)
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“…Some long-term fractionation has been reported for the system and it was considered that computer control was required to stabilize the accelerator set up further. 46 Datar et al 47 have used the related technique of accelerator SIMS to determine As in a GeSi matrix with a sensitivity significantly better than that possible with conventional SIMS using 10-20 keV primary ions. Litherland et al 36 investigated the use of cesium vapour between the target and local ionizer to overcome unstable negative ion beams, which resulted from surface charging upon the ion bombardment of insulators.…”
Section: Instrumentationmentioning
confidence: 99%
“…Some long-term fractionation has been reported for the system and it was considered that computer control was required to stabilize the accelerator set up further. 46 Datar et al 47 have used the related technique of accelerator SIMS to determine As in a GeSi matrix with a sensitivity significantly better than that possible with conventional SIMS using 10-20 keV primary ions. Litherland et al 36 investigated the use of cesium vapour between the target and local ionizer to overcome unstable negative ion beams, which resulted from surface charging upon the ion bombardment of insulators.…”
Section: Instrumentationmentioning
confidence: 99%
“…The emerging positive ions with MeV energies are measured in a Faraday cup or in a detector. The TEAMS technique is proven to be more sensitive than SIMS for many elements [11][12][13].…”
Section: Introductionmentioning
confidence: 99%