High-Sensitivity pH Sensor Based on Electrolyte-Gated In<sub>2</sub>O<sub>3</sub> TFT

Cai, Guolong; Qiang, Lei; Yang, Peng; Chen, Zimin; Zhuo, Yi; Li, Ya; Pei, Yanli; Wang, Gang

doi:10.1109/led.2018.2857925

Cited by 12 publications

(3 citation statements)

References 18 publications

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“…Among the metal oxide active layer materials, ZnO has the characteristics of being cheap, abundant, having a simple process, and being non-toxic, and can be prepared at low temperatures and applied to flexible substrates to manufacture flexible electronic devices. It conforms to the trend of flexible displays and wearable devices, therefore attracting the attention of many scholars [5][6][7][8][9][10]. However, ZnO thin films generally exhibit a polycrystalline state with a large number of intrinsic defects, and the carriers are scattered and trapped by high-density intrinsic defect states and grain boundaries during their transportation, resulting in poor performance of ZnO-TFTs.…”

Section: Introductionmentioning

confidence: 71%

High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

Wang

Jiang

et al. 2023

Nanomaterials

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H doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device’s performance. However, there are few studies on the combination of these two strategies. We fabricated TFTs with ZnO:H (4 nm)/ZnO (20 nm) double active layers by magnetron sputtering at room temperature, and studied the effect of the hydrogen flow ratio on the devices’ performance. ZnO:H/ZnO-TFT has the best overall performance when H2/(Ar + H2) = 0.13% with a mobility of 12.10 cm2/Vs, an on/off current ratio of 2.32 × 107, a subthreshold swing of 0.67 V/Dec, and a threshold voltage of 1.68 V, which is significantly better than the performance of single active layer ZnO:H-TFTs. This exhibits that the transport mechanism of carriers in double active layer devices is more complicated. On one hand, increasing the hydrogen flow ratio can more effectively suppress the oxygen-related defect states, thus reducing the carrier scattering and increasing the carrier concentration. On the other hand, the energy band analysis shows that electrons accumulate at the interface of the ZnO layer close to the ZnO:H layer, providing an additional path for carrier transport. Our research exhibits that the combination of a simple hydrogen doping process and double active layer construction can achieve the fabrication of high-performance ZnO-based TFTs, and that the whole room temperature process also provides important reference value for the subsequent development of flexible devices.

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Section: Introductionmentioning

confidence: 71%

High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

Wang

Jiang

et al. 2023

Nanomaterials

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“…It was also verified experimentally that after 500 As can be seen in Figure 13, TFT has numerous applications in flexible electronics, including sensing technology, electronic paper, memory, LCD and LED, optoelectronics, and biotechnology. In particular, in sensing technology, TFT can be used in numerous areas of sensors [67][68][69][70][71][72][73][74][75][76][77][78], such as pressure sensors, biosensors, chemical sensors, etc. Next, we will introduce some specific examples of TFT applications in the field of sensors.…”

Section: Huge Potential For V-tft Applications In Sensing and Other A...mentioning

confidence: 99%

Research Progress of Vertical Channel Thin Film Transistor Device

Sun

Huang

Wen

et al. 2023

Sensors

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Thin film transistors (TFTs) as the core devices for displays, are widely used in various fields including ultra-high-resolution displays, flexible displays, wearable electronic skins and memory devices, especially in terms of sensors. TFTs have now started to move towards miniaturization. Similarly to MOSFETs problem, traditional planar structure TFTs have difficulty in reducing the channel’s length sub-1μm under the existing photolithography technology. Vertical channel thin film transistors (V-TFTs) are proposed. It is an effective solution to overcome the miniaturization limit of traditional planar TFTs. So, we summarize the different aspects of VTFTs. Firstly, this paper introduces the structure types, key parameters, and the impact of different preparation methods in devices of V-TFTs. Secondly, an overview of the research progress of V-TFTs’ active layer materials in recent years, the characteristics of V-TFTs and their application in examples has proved the enormous application potential of V-TFT in sensing. Finally, in addition to the advantages of V-TFTs, the current technical challenge and their potential solutions are put forward, and the future development trend of this new structure of V-TFTs is proposed.

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“…Recently, many wide-band gap metal oxide semiconductor (MOS) materials, including zinc oxide (ZnO), nickel oxide (NiO), copper oxide (CuO), tin oxide (SnO 2 ), titanium dioxide (TiO 2 ), lead dioxide (PbO 2 ), ruthenium oxide (RuO 2 ), iridium dioxide (IrO 2 ), tungsten trioxide (WO 3 ), tantalum pentoxide (Ta 2 O 5 ), antimony trioxide (Sb 2 O 3 ), and indium oxide (In 2 O 3 ), have attracted considerable interest because of their special material performance in pH nanodevices. − Among them, the ZnO structure belongs to the II–VI groups of n-type MOS materials and has a large band gap of approximately 3.37 eV at room temperature and a high-exciton binding energy of about 60 meV. − ZnO MOS with crystal lattice constants of a = 0.3249 nm and c = 0.5207 nm is a hexagonal wurtzite system. It has many outstanding properties, such as low price, nontoxicity, remarkable thermochemical stability, excellent carrier mobility, good biocompatibility, and high mechanical strength. , One-dimensional (1-D) ZnO nanomaterials have been used in various electric components, such as pH sensors, gas sensors, ultraviolet photodetectors (UV PDs), nanogenerators (NGs), field-emission (FE) emitters, photocatalysts, light-emitting diodes (LEDs), glucose sensors, thin-film transistors (TFTs), and solar cells. − Up to now, many researchers have studied the preparation methods of ZnO nanorods (NRs), including thermal evaporation, hydrothermal methods, vapor–solid (VS), pulsed laser deposition (PLD), electrochemical deposition, and chemical vapor deposition (CVD).…”

Section: Introductionmentioning

confidence: 99%

High Sensitivity of Extended-Gate Field-Effect Transistors Based on 1-D ZnO:Ag Nanomaterials through a Cheap Photochemical Synthesis as pH Sensors at Room Temperature

Chu,

Young,

Tsai

et al. 2024

ACS Appl. Electron. Mater.

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We investigated an extended-gate field-effect transistor (EG-FET) as a pH sensor in this work. It was based on low-temperature hydrothermally grown one-dimensional (1-D) zinc oxide (ZnO) nanorod (NR) arrays. Additionally, silver nanoparticles (Ag NPs) were successfully synthesized on the surfaces of nanostructures through a simple photochemical synthesis process under ultraviolet (UV) light illumination at room temperature. The surface morphology, crystalline nature, elemental content, optical property, and electrical performance of both samples were explored and studied by field-emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), X-ray diffraction (XRD) system, energy-dispersive X-ray (EDX), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectrometer, UV−visible spectroscopy, and a Keithley 2410 semiconductor parameter analyzer with a personal computer. FE-SEM pictures, HR-TEM patterns, and XRD results indicated that the growth of all nanostructures preferentially oriented along the c-axis resulted in hexagonal wurtzite crystals, and the 1-D NRs grew vertically on the ZnO seed layer-coated substrate. The Z@Ag-1 samples were composed of Ag (2.64 atom %), Zn (58.17 atom %), and O (39.19 atom %) in the EDX result. HR-TEM elemental mappings, EDX images, and XPS spectra demonstrated that Ag NPs existed on the surface of the 1-D ZnO NR arrays. The optical characteristics of PL analysis and UV−visible spectroscopy showed two emissions, including UV and the visible region. In the electrical section, all pH sensors showed good pH stability properties and remarkable repeatability. After Ag NP decoration, the 1-D Z@Ag-1 samples exhibited superior pH-sensing response characteristics (59.06 mV/pH, 45.65 μA/pH) with good linearity (0.996, 0.998). Meanwhile, the hysteresis effect was only 1.49 mV as the pH of the solution changed in the following order: pH 7 → pH 4 → pH 7 → pH 10 → pH 7. The designed 1-D Z@Ag-1 pH sensors will be remarkably useful in pH-sensing fields and can be combined with Internet-of-Things applications, particularly in industrial, agricultural, medical, and military fields.

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High-Sensitivity pH Sensor Based on Electrolyte-Gated In₂O₃ TFT

Cited by 12 publications

References 18 publications

High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

Research Progress of Vertical Channel Thin Film Transistor Device

High Sensitivity of Extended-Gate Field-Effect Transistors Based on 1-D ZnO:Ag Nanomaterials through a Cheap Photochemical Synthesis as pH Sensors at Room Temperature

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High-Sensitivity pH Sensor Based on Electrolyte-Gated In2O3 TFT

Cited by 12 publications

References 18 publications

High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

Research Progress of Vertical Channel Thin Film Transistor Device

High Sensitivity of Extended-Gate Field-Effect Transistors Based on 1-D ZnO:Ag Nanomaterials through a Cheap Photochemical Synthesis as pH Sensors at Room Temperature

Contact Info

Product

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High-Sensitivity pH Sensor Based on Electrolyte-Gated In₂O₃ TFT