High sensitivity sensor for moderate pressures

Rosenbaum, T. F.; Carter, S. A.; Honig, J. M.

doi:10.1063/1.1146619

Cited by 6 publications

(5 citation statements)

References 6 publications

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“…We applied hydrostatic pressure P with a BeCu pressure cell designed to fit into the top-loading confines of an Ox-P (kbar) ford Model 200 dilution refrigerator. A chip of (Vo,99Tio,ol)203 inside the cell serves as a sensitive manometer through its own MI transition (14). We started with NiS1 56Se0,44 crystals just on the insulating side of the MI boundary and drove the system metallic with pressure.…”

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Dynamical Signature of the Mott-Hubbard Transition in Ni(S,Se) ₂

Husmann

Jin

Zastavker

et al. 1996

Science

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The transition metal chalcogenide Ni(S,Se)2 is one of the few highly correlated, Mott-Hubbard systems without a strong first-order structural distortion that normally cuts off the critical behavior at the metal-insulator transition. The zero-temperature (T) transition was tuned with pressure, and significant deviations were found near the quantum critical point from the usual T1/2 behavior of the conductivity characteristic of electron-electron interactions in the presence of disorder. The transport data for pressure and temperature below 1 kelvin could be collapsed onto a universal scaling curve.

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confidence: 95%

Dynamical Signature of the Mott-Hubbard Transition in Ni(S,Se) ₂

Husmann

Jin

Zastavker

et al. 1996

Science

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“…We applied hydrostatic pressures P up to 17 kbar using a BeCu piston-anvil self-locking pressure clamp with a tungsten carbide insert. Samples of typical dimensions ͑3.0 3 0.8 3 0.8͒ mm 3 , as well as a chip of ͑V 0.99 Ti 0.01 ͒ 2 O 3 for use as a manometer [15], were sealed in the Teflon bucket using Fluorinert as the pressure medium. The pressure cell was then mounted in a helium-3 cryostat centered in an 8 T superconducting magnet, with the long axis of the sample perpendicular to the magnetic field direction.…”

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Band-Gap Tuning and Linear Magnetoresistance in the Silver Chalcogenides

et al. 2002

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Optimally doped silver selenide and silver telluride exhibit linear positive magnetoresistance over decades in magnetic field and on a scale comparable to the colossal magnetoresistance compounds. We use hydrostatic pressure to smoothly alter the band structure of Ag-rich and Ag-deficient samples of semiconducting Ag 26d Te of fixed stoichiometry and disorder. We find that the magnetoresistance spikes and the linear field dependence emerges when the bands cross and the Hall coefficient changes sign. DOI: 10.1103/PhysRevLett.88.066602 PACS numbers: 72.20.My, 72.15.Gd, 72.80.Jc The magnetoresistive response of a material can open a window into the dispersion and dynamics of the charge carriers, and in opportune cases can be exploited for technological use. The magnetoresistance at small fields is usually quadratic because of the vector nature of the magnetic field, and is expected to saturate when the applied field becomes large [1]. Under special circumstances, the resistivity can grow linearly with applied field [2]. High-field linear magnetoresistance can be found in polycrystalline materials with open orbits in the Fermi surface [3], in inhomogeneous materials where the tensor components of the resistivity can be mixed [4], and in the extreme quantum limit where one Landau level dominates (e.g., bismuth) [5 -7].A few years ago, positive linear magnetoresistance was observed from magnetic fields of mT to T in the silver chalcogenides, Ag 2 Se and Ag 2 Te [8]. Stoichiometric material remains indifferent to the application of a magnetic field [9], but small amounts of excess silver or excess Se/Te lead to changes in the resistivity of many hundreds of percent in fields of a few T. This large magnetic response is comparable in absolute magnitude to that observed in manganese perovskites, the so-called colossal magnetoresistance materials, but occurs here in intrinsically nonmagnetic materials that can be fabricated both in bulk and as thin films [8,[10][11][12][13].The unusually large range of linearity observed in some samples of Ag 21d Se and Ag 21d Te, the failure of the magnetoresistance to saturate even when the product of the cyclotron frequency and the scattering time, v c t, greatly exceeds one, and the robust absolute scale of the response combine to make the silver chalcogenides especially inviting materials to illuminate the mechanisms of linear magnetoresistance. In particular, Abrikosov has proposed that an essential ingredient for "quantum linear magnetoresistance" in both the small and large field limits is a semiconducting gap that approaches zero, with an energy dispersion that becomes linear in momentum [2,14].In this Letter, we use hydrostatic pressure to tune the band gap of both p-type and n-type samples of silver telluride of fixed stoichiometry and disorder. Under pressure, hole-dominated transport can be transformed into electron-dominated transport, and barely metallic n-type samples can be converted into good metals. We find for p-type material that both the linear magnetoresistance a...

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“…Hydrostatic pressures up to 7 kbar were achieved using a BeCu piston-anvil self-locking pressure clamp with silicone oil as the pressure medium and a fragment of ͑V 0.99 Ti 0.01 ͒ 2 O 3 as the manometer. 8 All magnetotransport and magnetic susceptibility data were obtained in the ohmic and frequency-independent limits using standard lock-in techniques.…”

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Temperature dependence of the Hall angle in a correlated three-dimensional metal

et al. 1998

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The Hall coefficient, R H , of the Mott-Hubbard system vanadium sesquioxide has a strong temperature dependence in the barely delocalized metal. As in the case of the cuprate superconductors, we find that the resistivity and the Hall angle of V 2Ϫy O 3 follow different power laws in temperature, implying different longitudinal and transverse scattering mechanisms. Far from half-filling, only one transport scattering rate is needed to describe the data, at which point the temperature dependence of R H disappears. ͓S0163-1829͑98͒51922-4͔The peculiar temperature dependence of the Hall coefficient in the superconducting cuprates is a striking manifestation of their unconventional normal-state properties. With the magnetic field applied perpendicular to the CuO 2 planes, the Hall coefficient rapidly increases with decreasing temperature, peaking just above the superconducting transition temperature. In studies of ( xy / xx ), reveals two separate relaxation rates for carrier motion. Whereas the planar resistivity varies linearly with T, cot H ϳT 2 , implying different longitudinal and transverse ͑''Hall''͒ scattering mechanisms. These experimental results have then been cited as evidence for Anderson's theoretical picture 3 of the decoupling of spin and charge in a highly correlated, two-dimensional system.We find in the three-dimensional correlated metal, V 2Ϫy O 3 , a remarkably similar experimental situation. Vanadium sesquioxide has served as the prototype for the MottHubbard metal-insulator transition, with coincident electronic, magnetic, and structural phase transitions. 4,5 With the magnetic field applied along any arbitrary direction, the Hall coefficient rapidly increases with decreasing temperature in the barely delocalized metal, peaking just above the Néel temperature. Parametrization of the data in terms of the Hall angle reveals two separate relaxation rates for carrier motion. Whereas the longitudinal resistivity follows a T 3/2 form consistent with scattering off spin fluctuations, again cot H ϳT 2 . The microscopic origin of an additional scattering rate is unclear, but it appears to be linked to the proximity of the Mott-Hubbard transition; the anomalous temperature dependence of the Hall coefficient ͑and the different power laws for and cot H ͒ disappear for crystals with large hole concentrations.Single crystals of V 2 O 3 were grown using a skull melter and then were annealed in a CO-CO 2 atmosphere at 1400°C for approximately two weeks to adjust the stoichiometry uniformly. 6 The stoichiometry of the V 2Ϫy O 3 crystals was determined within 0.001 of y using thermograviometric analysis. 7 Hall measurements were performed in the linear field regime on crystals with typical dimensions 1ϫ1 ϫ0.15 mm 3 . Hydrostatic pressures up to 7 kbar were achieved using a BeCu piston-anvil self-locking pressure clamp with silicone oil as the pressure medium and a fragment of ͑V 0.99 Ti 0.01 ͒ 2 O 3 as the manometer.8 All magnetotransport and magnetic susceptibility data were obtained in the ohmic and frequency-i...

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High sensitivity sensor for moderate pressures

Cited by 6 publications

References 6 publications

Dynamical Signature of the Mott-Hubbard Transition in Ni(S,Se) ₂

Dynamical Signature of the Mott-Hubbard Transition in Ni(S,Se) ₂

Band-Gap Tuning and Linear Magnetoresistance in the Silver Chalcogenides

Temperature dependence of the Hall angle in a correlated three-dimensional metal

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High sensitivity sensor for moderate pressures

Cited by 6 publications

References 6 publications

Dynamical Signature of the Mott-Hubbard Transition in Ni(S,Se) 2

Dynamical Signature of the Mott-Hubbard Transition in Ni(S,Se) 2

Band-Gap Tuning and Linear Magnetoresistance in the Silver Chalcogenides

Temperature dependence of the Hall angle in a correlated three-dimensional metal

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Dynamical Signature of the Mott-Hubbard Transition in Ni(S,Se) ₂

Dynamical Signature of the Mott-Hubbard Transition in Ni(S,Se) ₂