High Signal-to-Noise Ratio Hall Devices with a 2D Structure of Dual δ-Doped GaAs/AlGaAs for Low Field Magnetometry

Chen, Di; Zhao, Bin; Xin, Zhang

doi:10.1088/0256-307x/32/12/128502

Cited by 4 publications

(7 citation statements)

References 15 publications

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“…Simplified band diagrams modelling by two back-to-back capacitors. Unlike homogeneous bulkdoped materials, where the electrons and ionized donors appear in the same spatial location, for Si-δ-doped heterojunction QW the electrons are transferred to the QW region while the ionized donors remain in the δ-doped layers [11][12][13][14][15][16][17][18][19] . Because of the separation of charges, a model consisted of two back-to-back capacitors was chosen to calculate the internal transverse electric field (F) and electric potential difference ΔV across the space layer.…”

Section: Resultsmentioning

confidence: 99%

“…Because of the separation of charges, a model consisted of two back-to-back capacitors was chosen to calculate the internal transverse electric field (F) and electric potential difference ΔV across the space layer. Fur- www.nature.com/scientificreports/ thermore, a symmetric band diagram was assumed for simplicity for a dual and symmetric δ-doped layers [17][18][19] as depicted in Fig. 5a.…”

Section: Resultsmentioning

confidence: 99%

“…As compared to the single Si-δ-doping, the dual and symmetric Si-δ-doping (modulation doping with two planes of Si evenly separating into two sides of the active channel with appropriate t S , see Fig. 1) can afford nearly a similar electron concentration in the active channel with low induced internal electric field due to the symmetric distribution of Si-δ-dopants and hence provide an even higher μ n due to the further reduction of scattering effects [17][18][19] .…”

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confidence: 99%

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Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

et al. 2020

Sci Rep

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temperature (T = 40 ~ 300 K) dependence of Hall-effect analysis on the dual Si-δ-doped AlGaAs/ InGaAs/AlGaAs quantum-well (QW) structures with various space layer thicknesses (t S = 5, 10 and 15 nm) was performed. An interesting hysteresis behavior of electron sheet concentration [n 2D (T)] was observed for t S = 10 and 15 nm but not for t S = 5 nm. A model involving two different activation barriers encountered respectively by electrons in the active QW and by electrons in the δ-doped layers is proposed to account for the hysteresis behavior. However, for small enough t S (= 5 nm ≤ 2.5 s, where s = 2.0 nm is the standard deviation of the Gaussian fit to the Si-δ-doped profile), the distribution of Si dopants near active QW acted as a specific form of "modulation doping" and can not be regarded as an ideal δ-doping. These Si dopants nearby the active QW effectively increase the magnitude of n 2D , and hence no hysteresis curve was observed. Finally, effects from t S on the T-dependence of electron mobility in active QW channel are also discussed.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

et al. 2020

Sci Rep

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“…The results show that k = 0.2419 mT/A, b = 0.08571 mT, so the linear relationship between the calculated current and the magnetic field calculated by the diamond ODMR resonance frequency solution can be deduced from formula (5), which can be expressed as…”

Section: Resultsmentioning

confidence: 99%

“…[3] Current sensors have developed to different degrees at home and abroad, which can be roughly divided into direct measurement and indirect measurement, and there are many kinds of non-contact current sensors. Current sensors commonly used in the industrial field based on Ampere loop law include Rogowski coil current sensor, Hall effect current sensor, [4,5] fluxgate current sensor, [6,7] magnetoresistance (AMR, GMR, TMR, CMR, etc) and current transformer, [8] which have their own advantages and disadvantages in all aspects. In other fields, there are current sensors based on NMR, quantum Hall effect, superconducting quantum interference squid and other principles.…”

Section: Introductionmentioning

confidence: 99%

Current sensor based on diamond nitrogen-vacancy color center

et al. 2023

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High precision current measurement is very important for the calibration of various high-precision equipment and the measurement of other precision detection fields. A new current sensor based on diamond NV color center magnetic measurement method is proposed to realize the accurate measurement of current. This new current method can greatly improve the accuracy of current measurement. Experiments show that the linearity of the current sensor based on diamond NV color center can reach up to 33 ppm, which is superior to other current sensors and solves the problem of low linearity. When the range of input current is 5-40 A, the absolute error of calculated current is less than 51 µA, and the relative error is 2.42 × 10-6 at 40 A. Combined with the research content and results of the experiment, the application of the current sensor in the field of current precision measurement is prospected.

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Effect of staggered array structure on the flow field of micro gas chromatographic column

Ge¹,

Zhou²,

Zhang³

et al. 2022

Chinese Phys. B

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A new design of staggered array semi-packed micro gas chromatographic column was presented based on the micro electromechanical system (MEMS) technology. It was a sensor for gas sample analysis. The internal velocity fields of ten types of semi-packed micro gas chromatographic column were studied. The effects of array spacing and dislocation spacing on the flow field distribution were investigated. The results show that on the basis of ensuring the formation of virtual wall, with the increase of array spacing, the maximum velocity difference between the flow channels in the vertical direction decreases gradually, but the velocity difference in the flow channels a and b increases. When the inlet velocity was set to be 0.18 m/s, the maximum velocity difference in the channel of the staggered semi-packed micro gas chromatography column 3 (CSAC3) was 0.05610 m/s. The maximum velocity difference in the channel a was 0.09160 m/s. The maximum velocity difference in the channel b was 0.02401 m/s. CSAC3 had a more uniform velocity field distribution, which can effectively suppress the laminar flow effect during chromatographic separation, and had a smaller pressure distribution, which puts forward lower requirements for carrier gas system. The staggered array semi-packed micro gas chromatography column proposed in this paper can effectively improve the velocity field distribution and pressure distribution in the channel, and provide a theoretical basis for the design of the new micro gas chromatography column structure.

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High Signal-to-Noise Ratio Hall Devices with a 2D Structure of Dual δ-Doped GaAs/AlGaAs for Low Field Magnetometry

Cited by 4 publications

References 15 publications

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

Current sensor based on diamond nitrogen-vacancy color center

Effect of staggered array structure on the flow field of micro gas chromatographic column

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